http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91864 Fri, 03 Apr 2026 19:28:16 GMT 2026-04-03T19:28:16Z http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94267 標題: 高性能凡德瓦高介電材料雙閘極二硫化鉬場效電晶體; High Performance of Dual-gated Molybdenum Disulfide Field Effect Transistor Enabled by van der Waals High-κ Dielectric Material 作者: 曾楷崴; Kai-Wei Tseng 摘要: 由於傳統介電材料如氧化鋁(Al2O3)和二氧化矽(SiO2)具有較高的熔點，直接通過熱蒸鍍在二維材料上沉積氧化層可能會導致破壞。因此，三氧化二銻(Sb2O3)由於其獨特的材料性質，可以作為二硫化鉬(MoS2)場效電晶體的閘極氧化層。三氧化二銻具有高介電常數(11.5)，其分子間透過凡德瓦力相互結合，在高真空(10-6 Torr)條件下於186℃昇華。三氧化二銻分子是雙環籠(bicyclic cage)結構，且無懸鍵結構，與二硫化鉬在界面處形成凡德瓦接觸，相較於傳統的氧化層提供了更卓越的介電性能。 在本研究中，該元件在室溫(T= 298K)下的上閘極(VTG)工作範圍為±1 V。最大汲極-源極電流(IDS)為0.21 µA，並展示出高達106的開關比。此元件的臨界電壓(VTH)為0.0088 V，次臨界擺幅(SS)為86.1 mV/dec，載子遷移率為13.5 cm2/Vs，遲滯為24mV。在常關態(normally-off state)的元件中，施加+8V的背閘極(VBG)，變為常開態(normally-on state)，IDS為0.74 µA，相比於常關態，載子遷移率提升355倍，遲滯僅為6.51mV。所有性能均具有高度競爭力，代表了在二維材料CMOS元件發展方面有顯著進步。; Due to the high melting point for the conventional dielectric material such as aluminum oxide (Al2O3) and silicon dioxide (SiO2), depositing oxide layers on two-dimensional materials directly via thermal evaporator may lead to damage. Therefore, antimony trioxide (Sb2O3), a high dielectric constant (11.5) material, can be the oxide layer in molybdenum disulfide (MoS2) field-effect transistors because of its unique material properties which molecules are bonded by van der Waals force and sublime at 186℃ in high vacuum (10-6 Torr) condition. Sb2O3 molecules are bicyclic cage structure which is free-dangling bond and form van der Waals contacts with MoS2 at the interface, offering superior performance compared to conventional oxide layers. In this study, the device has an applied range of ±1V for top gate (VTG) at room temperature (T = 298K). The maximum drain-source current (IDS) is 0.21 µA, and it exhibits a high on/off ratio of up to 106. The threshold voltage (VTH) for this device is 0.0088 V, the subthreshold swing (SS) is 86.1 mV/dec, the carrier mobility is 13.5 cm²/Vs and hysteresis is 24 mV. In a normally-off device, applying +8V to the back gate (VBG) switches it to a normally-on state. The IDS reaches 0.74 µA, which carrier mobility is 355 times larger than normally-off state, with a hysteresis of only 6.51 mV. All the performance are highly competitive, which represents significant progress in the development of two-dimensional material CMOS devices. Mon, 01 Jan 2024 00:00:00 GMT http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/94267 2024-01-01T00:00:00Z http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98948 標題: 開發微波頻段電磁干擾量測系統暨檢測石墨烯複合材料電磁屏蔽效果; Development of a Microwave-Band EMI Measurement System and Evaluation of Electromagnetic Shielding Effectiveness of Graphene Composites 作者: 馬渝翔; Yu-Hsiang Ma 摘要: 科技的進步飛速，其中半導體產業的發展可以說是所有研究的基礎。半導體元件內部的電晶體密度提高，元件之間的距離也不斷縮小，追求效能提升的同時，電磁干擾的問題卻也日益嚴重，因此出現了各種解決電磁干擾的方法，包括改變電路佈局、元件的擺放位置或是使用電磁屏蔽材料。電磁屏蔽材料的研發需要不斷的透過實際量測數據進行反饋，並根據量測結果修正材料的製作參數，因此電磁干擾之量測系統的量測成本和速度是研究電磁屏蔽材料的關鍵，若每次量測都使用租借成本昂貴且排程時間冗長的電波暗室，將不利材料的研發進度。 本論文提出一套電磁干擾近場掃描量測系統，利用電壓隨耦器(Voltage Follwer)電路，創造出頻率可控的電磁輻射源，量測平台符合國際IC電磁干擾量測標準IEC 61967-1定義的10 cm × 10 cm四層板PCB，以及IEC 61967-3晶片表面掃描的量測規範，可快速且有效的量測各種電磁屏蔽材料於不同頻率下的屏蔽效率，頻率範圍含括IEC 61967-3所訂定之規範。此量測系統具有高度靈活性，既可量測薄膜型態的電磁屏蔽材料，也可將屏蔽材料封裝在IC上再進行量測，可在材料開發的早期階段就快速取得大量的電磁屏蔽效率量測數據，建立材料製作參數與屏蔽效能的對應關係，大幅提升屏蔽材料的研發速度。; The advancement of technology is growing rapidly, and one of the most important industries is semiconductor. As the density of transistors within semiconductor devices continues to increase and the spacing between chips decreases, the issue of electromagnetic interference (EMI) has become increasingly severe. Various methods to mitigate EMI have been proposed, including modifications to circuit layout, adjustments to chips placement on the circuit board, and the use of electromagnetic shielding materials. The development of EMI shielding materials requires continuous feedback through actual measurement data. Therefore, the cost and efficiency of EMI measurement systems are critical to the research and development of shielding materials. Anechoic chambers, which are expensive to build and takes long scheduling times to rent it, is not a good choice in early stage of material development. This work proposes a near-field EMI scanning measurement system that utilizes a voltage follower circuit to generate an electromagnetic radiation source with tunable frequency. The measurement platform complies with the international standard IEC 61967-1 for EMI testing of integrated circuits, specifically a 10 cm 10 cm four-layer PCB, as well as the IEC 61967-3 standard for IC surface scanning. The system enables effective evaluation of the shielding effectiveness of various materials across a wide frequency range, fully covering the specifications defined by IEC 61967-3. This measurement system offers high flexibility, allowing both the characterization of film-type shielding materials and the shielding materials directly packaged onto ICs. It help collecting shielding effectiveness data during the early stage of material development, enabling the establishment of correlations between fabrication parameters and shielding performance, significantly accelerating the R&D process of EMI shielding materials. Wed, 01 Jan 2025 00:00:00 GMT http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98948 2025-01-01T00:00:00Z http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91867 標題: 發展連續混類別變數之資料增強技術與分析框架 - 以製程良率分析為例; On the Development of Data Augmentation Techniques and Analytical Framework for Continuous & Categorical Type Variables - A Case Study on Process Yield Analysis 作者: 吳亭緯; Ting-Wei Wu 摘要: 不平衡資料集在製程良率分析、金融交易、醫療影像分析等多種領域的資料處理中構成了顯著的挑戰，特別是當面對含有連續和類別變數的混合型資料時，傳統的資料增強技術常常無法充分解決類別間的不平衡問題，導致各類預測模型的偏差。為了解決這一問題，本研究提出了一種創新的資料增強框架，該框架結合了SMOTE（Synthetic Minority Over-sampling Technique）或PCMD（Principal Component Mahalanobis Distance）方法對連續變數進行上採樣，再搭配連續變數和類別變數採取多種不同方法建立模型，藉此探究少數類別中連續變數和類別變數的關聯，以模型預測的方式達成類別變數的上採樣，完整地生成了具連續與類別型態變數的輸入資料，進而提升模型的預測能力。 本研究首先證明了在製程良率資料集上，與傳統方法相比，提出的方法能夠有效提高對少數類別的識別率並改善模型的整體性能。本方法不僅在數量上平衡了類別分布，同時也在品質上保證了增強資料與原始資料之間的相關性和一致性。實驗結果顯示，該方法在模型泛化能力和預測能力上均有顯著提升。 進一步地，本框架的應用不侷限於製程良率分析，其可擴展性使其在醫學、金融等其它需要處理非平衡混合型資料的場景中同樣具有潛力。本研究為處理包含連續與類別型態變數的不平衡資料集提供了一種新的途徑，展現了在各種不同應用情境下的潛在價值和廣泛適用性。; Imbalanced datasets pose a significant challenge in data processing across various fields such as process yield analysis, financial transactions, and medical image analysis, especially when dealing with mixed data containing both continuous and categorical variables. Traditional data augmentation techniques often fail to adequately address the imbalance between categories, leading to biases in various predictive models. To address this issue, this study introduces an innovative data augmentation framework that integrates SMOTE (Synthetic Minority Over-sampling Technique) or PCMD (Principal Component Mahalanobis Distance) methods to oversample continuous variables. It further combines different methods for both continuous and categorical variables to explore the relationship between continuous variables and categorical variables in the minority classes. This approach aims to achieve categorical variable oversampling through predictive modeling, thereby generating comprehensive input data with both continuous and categorical variables, and consequently enhancing the predictive capability of models. This research initially demonstrates that, compared to traditional methods, the proposed approach significantly improves the identification rate of minority classes and the overall performance of the model on process yield datasets. The method not only balances the category distribution quantitatively but also ensures the relevance and consistency between the augmented and original data qualitatively. Experimental results indicate a notable enhancement in the model's generalization and predictive capabilities. Furthermore, the application of this framework is not limited to process yield analysis; its scalability makes it potentially beneficial in other scenarios requiring the handling of imbalanced mixed data, such as in medicine and finance. This study provides a new avenue for dealing with imbalanced datasets containing both continuous and categorical variables, demonstrating its potential value and wide applicability in various application scenarios. Mon, 01 Jan 2024 00:00:00 GMT http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91867 2024-01-01T00:00:00Z http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/99733 標題: 熱退火金/n型矽蕭特基侷域式表面電漿子共振感測器之製作與光電特性分析; Fabrication and Optoelectronic Characterization of a Thermal-Annealed Au/n-Silicon Schottky Junction for Localized Surface Plasmon Resonance Sensing Applications 作者: 郭昌儒; Chang-Ru Guo 摘要: 本研究聚焦於金/矽（Au/n-Si）金屬–半導體異質接面在不同介質環境下之光電特性與載子傳輸行為，透過理論推導、數值模擬與實驗驗證進行多層次分析。初步以傳輸矩陣法與米氏理論探討表面電漿共振與侷域式共振模態，並透過多物理場模擬分析空氣與水中場型分佈，揭示折射率與結構非對稱性之影響。 實驗方面，製作金/矽晶片並量測其電流–電壓特性，結果顯示經熱退火處理可有效提升導通性，使導通電流提升逾 200%。裝置於 850 奈米光源下展現穩定微安培等級光電流，並於溶液環境中驗證光響應隨折射率升高而下降，符合侷域式表面電漿子共振感測原理。 進一步引入甲基化與去甲基化 HOXB6 DNA 分子進行分子修飾，形成具偶極性之自組裝單層。其偶極場除促進熱載子注入、增強光電流外，亦可能降低界面缺陷密度，進一步改善元件導通與感測表現。 綜上所述，本研究成功建立電流型侷域式表面電漿子共振感測平台，具微型化與生醫感測潛力，未來可應用於穿戴式與智慧型感測元件之開發。; This study presents a systematic investigation of Au/n-Si metal–semiconductor heterojunctions for current-mode localized surface plasmon resonance (LSPR) sensing. Through theoretical modeling, numerical simulation, and experimental validation, we analyze how dielectric environment and surface modification affect optoelectronic properties. Using the transfer matrix method and Mie theory, we model SPR and LSPR characteristics and field distributions, revealing that water induces leaky modes while air enhances confinement. Experiments confirm diode-like behavior with enhanced current after thermal annealing. Under 850 nm illumination, the devices generate stable microampere-scale photocurrent. Refractive index sensing with DI water, NaCl, and glucose shows a decreasing trend in photocurrent as refractive index increases, consistent with LSPR mechanisms. Moreover, self-assembled monolayers of methylated and unmethylated HOXB6 DNA introduce interfacial dipoles aligned with the built-in electric field. Although Schottky barrier height slightly increases, the dipole-induced field assists hot carrier injection, enhancing photocurrent. DNA adsorption may also passivate interfacial defects. These results demonstrate the feasibility of integrating LSPR and Schottky barrier effects for label-free biosensing, with potential applications in wearable and miniaturized diagnostic platforms. Wed, 01 Jan 2025 00:00:00 GMT http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/99733 2025-01-01T00:00:00Z