社群:http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/918632026-03-24T20:44:12Z2026-03-24T20:44:12Z高性能凡德瓦高介電材料雙閘極二硫化鉬場效電晶體曾楷崴Kai-Wei Tsenghttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/942672024-08-15T16:31:49Z2024-01-01T00:00:00Z標題: 高性能凡德瓦高介電材料雙閘極二硫化鉬場效電晶體; High Performance of Dual-gated Molybdenum Disulfide Field Effect Transistor Enabled by van der Waals High-κ Dielectric Material
作者: 曾楷崴; Kai-Wei Tseng
摘要: 由於傳統介電材料如氧化鋁(Al2O3)和二氧化矽(SiO2)具有較高的熔點，直接通過熱蒸鍍在二維材料上沉積氧化層可能會導致破壞。因此，三氧化二銻(Sb2O3)由於其獨特的材料性質，可以作為二硫化鉬(MoS2)場效電晶體的閘極氧化層。三氧化二銻具有高介電常數(11.5)，其分子間透過凡德瓦力相互結合，在高真空(10-6 Torr)條件下於186℃昇華。三氧化二銻分子是雙環籠(bicyclic cage)結構，且無懸鍵結構，與二硫化鉬在界面處形成凡德瓦接觸，相較於傳統的氧化層提供了更卓越的介電性能。
在本研究中，該元件在室溫(T= 298K)下的上閘極(VTG)工作範圍為±1 V。最大汲極-源極電流(IDS)為0.21 µA，並展示出高達106的開關比。此元件的臨界電壓(VTH)為0.0088 V，次臨界擺幅(SS)為86.1 mV/dec，載子遷移率為13.5 cm2/Vs，遲滯為24mV。在常關態(normally-off state)的元件中，施加+8V的背閘極(VBG)，變為常開態(normally-on state)，IDS為0.74 µA，相比於常關態，載子遷移率提升355倍，遲滯僅為6.51mV。所有性能均具有高度競爭力，代表了在二維材料CMOS元件發展方面有顯著進步。; Due to the high melting point for the conventional dielectric material such as aluminum oxide (Al2O3) and silicon dioxide (SiO2), depositing oxide layers on two-dimensional materials directly via thermal evaporator may lead to damage. Therefore, antimony trioxide (Sb2O3), a high dielectric constant (11.5) material, can be the oxide layer in molybdenum disulfide (MoS2) field-effect transistors because of its unique material properties which molecules are bonded by van der Waals force and sublime at 186℃ in high vacuum (10-6 Torr) condition. Sb2O3 molecules are bicyclic cage structure which is free-dangling bond and form van der Waals contacts with MoS2 at the interface, offering superior performance compared to conventional oxide layers.
In this study, the device has an applied range of ±1V for top gate (VTG) at room temperature (T = 298K). The maximum drain-source current (IDS) is 0.21 µA, and it exhibits a high on/off ratio of up to 106. The threshold voltage (VTH) for this device is 0.0088 V, the subthreshold swing (SS) is 86.1 mV/dec, the carrier mobility is 13.5 cm²/Vs and hysteresis is 24 mV. In a normally-off device, applying +8V to the back gate (VBG) switches it to a normally-on state. The IDS reaches 0.74 µA, which carrier mobility is 355 times larger than normally-off state, with a hysteresis of only 6.51 mV. All the performance are highly competitive, which represents significant progress in the development of two-dimensional material CMOS devices.2024-01-01T00:00:00Z高品質分散式圖著色演算法吳建賢Chien-Hsien Wuhttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/982252025-07-30T16:24:24Z2025-01-01T00:00:00Z標題: 高品質分散式圖著色演算法; Distributed High-Quality Graph Coloring Algorithm on GPUs
作者: 吳建賢; Chien-Hsien Wu
摘要: 圖著色（Graph Coloring）是一種基礎的演算法，目的是將顏色分配給圖形的節點，且相鄰節點不能擁有相同的顏色。在平行圖著色演算法中，主要評估兩個參數：顏色的品質與執行速度。我們提出的優化包含兩個部分：
首先，我們重新設計 JP-SL 的優先級分配流程，以減少全域頂點掃描的次數並在執行過程中更有效地利用平行化。其次，我們將大規模圖劃分為多個子圖，並將其分配至多個 GPU 上同時運行，以進一步提升整體執行效率。; Graph coloring is a fundamental problem involving the assignment of colors to the vertices of a graph, ensuring that no two adjacent vertices possess the same color. In parallel graph coloring, two primary parameters are evaluated: color quality and execution speed. Our optimization methodology has two parts.
We first improve priority allocation by re-engineering JP-SL to minimize global vertex scans and optimize parallelism during execution. Secondly, we enhance the overall runtime by splitting the extensive graph into subgraphs and allocating them across many GPUs for concurrent execution.2025-01-01T00:00:00Z離子敏感型場效電晶體設計於Troponin I感測之研究滑凱茵Hoi-Yan Wathttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/934602024-08-01T16:14:40Z2024-01-01T00:00:00Z標題: 離子敏感型場效電晶體設計於Troponin I感測之研究; An Implementation of Ion Sensitive Field Effect Transistors for Troponin I Detection
作者: 滑凱茵; Hoi-Yan Wat
摘要: 隨著全球各國陸續進入高齡化的社會，醫療問題顯得日益重要，根據多項研究指出，心血管疾病佔據所有疾病死因之冠，如急性心肌梗塞等都是人類健康的一大威脅。
因此，本篇論文主要探討如何製作出一個有良好穩定度，精確又能快速檢驗的生物感測器。我們將從半導體元件設計為核心，採用不同結構、不同面積、並進一步針對感測膜材料進行談討。再者，我們使用表面改質的方法，使表面種上抗體，使元件能有效檢測出抗原的濃度。接著，進行選擇比測試，說明元件具有的專一性吸附的特性。最後進行穩定度測試，驗證何種感測膜能夠有最少的時間飄移，以減少元件所造成的誤差。
在這篇論文中，我們驗證了多種大小、不同材料的元件，得到Al2O3有良好的穩定性，同時最大面積的Al2O3感測膜靈敏度甚至能夠達到50.4 mV/decade 的Troponin I量測。若未來能進一步結合大數據的資料及AI模型的訓練，將能夠有效解決時間飄移的問題，使臨床上有更穩定的表現，實現快速，精準的醫療檢測器。; As global populations continue to age, healthcare issues become increasingly important. Numerous studies have identified cardiovascular diseases as the leading cause of mortality, presenting significant threats to human health, including acute myocardial infarction.
This paper addresses the development of a stable, precise, and rapid biosensor. It focuses on semiconductor device design, exploring various structures and areas, and deep into discussions regarding sensing membrane materials. Additionally, surface modification techniques are employed to immobilize antibodies on the surface, enabling effective detection of antigen concentrations. Subsequent selectivity tests demonstrate the specificity of the device. Finally, stability tests are conducted to discover which sensing membrane exhibits minimal drift over time.
Through this study, we validate multiple devices of varying sizes and materials, identifying Al2O3 exhibited excellent sensitivity and stability. Furthermore, the largest area Al2O3 sensing membrane demonstrates a sensitivity of up to 50.4 mV/decade for Troponin I measurement. We hope to have the integration of big data and AI model training in future research holds promise for effectively addressing drift issues, leading to more stable performance in clinical settings and facilitating rapid and accurate medical diagnostics.2024-01-01T00:00:00Z開發微波頻段電磁干擾量測系統暨檢測石墨烯複合材料電磁屏蔽效果馬渝翔Yu-Hsiang Mahttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/989482025-08-20T16:23:57Z2025-01-01T00:00:00Z標題: 開發微波頻段電磁干擾量測系統暨檢測石墨烯複合材料電磁屏蔽效果; Development of a Microwave-Band EMI Measurement System and Evaluation of Electromagnetic Shielding Effectiveness of Graphene Composites
作者: 馬渝翔; Yu-Hsiang Ma
摘要: 科技的進步飛速，其中半導體產業的發展可以說是所有研究的基礎。半導體元件內部的電晶體密度提高，元件之間的距離也不斷縮小，追求效能提升的同時，電磁干擾的問題卻也日益嚴重，因此出現了各種解決電磁干擾的方法，包括改變電路佈局、元件的擺放位置或是使用電磁屏蔽材料。電磁屏蔽材料的研發需要不斷的透過實際量測數據進行反饋，並根據量測結果修正材料的製作參數，因此電磁干擾之量測系統的量測成本和速度是研究電磁屏蔽材料的關鍵，若每次量測都使用租借成本昂貴且排程時間冗長的電波暗室，將不利材料的研發進度。
本論文提出一套電磁干擾近場掃描量測系統，利用電壓隨耦器(Voltage Follwer)電路，創造出頻率可控的電磁輻射源，量測平台符合國際IC電磁干擾量測標準IEC 61967-1定義的10 cm × 10 cm四層板PCB，以及IEC 61967-3晶片表面掃描的量測規範，可快速且有效的量測各種電磁屏蔽材料於不同頻率下的屏蔽效率，頻率範圍含括IEC 61967-3所訂定之規範。此量測系統具有高度靈活性，既可量測薄膜型態的電磁屏蔽材料，也可將屏蔽材料封裝在IC上再進行量測，可在材料開發的早期階段就快速取得大量的電磁屏蔽效率量測數據，建立材料製作參數與屏蔽效能的對應關係，大幅提升屏蔽材料的研發速度。; The advancement of technology is growing rapidly, and one of the most important industries is semiconductor. As the density of transistors within semiconductor devices continues to increase and the spacing between chips decreases, the issue of electromagnetic interference (EMI) has become increasingly severe. Various methods to mitigate EMI have been proposed, including modifications to circuit layout, adjustments to chips placement on the circuit board, and the use of electromagnetic shielding materials. The development of EMI shielding materials requires continuous feedback through actual measurement data. Therefore, the cost and efficiency of EMI measurement systems are critical to the research and development of shielding materials. Anechoic chambers, which are expensive to build and takes long scheduling times to rent it, is not a good choice in early stage of material development.
This work proposes a near-field EMI scanning measurement system that utilizes a voltage follower circuit to generate an electromagnetic radiation source with tunable frequency. The measurement platform complies with the international standard IEC 61967-1 for EMI testing of integrated circuits, specifically a 10 cm 10 cm four-layer PCB, as well as the IEC 61967-3 standard for IC surface scanning. The system enables effective evaluation of the shielding effectiveness of various materials across a wide frequency range, fully covering the specifications defined by IEC 61967-3. This measurement system offers high flexibility, allowing both the characterization of film-type shielding materials and the shielding materials directly packaged onto ICs. It help collecting shielding effectiveness data during the early stage of material development, enabling the establishment of correlations between fabrication parameters and shielding performance, significantly accelerating the R&D process of EMI shielding materials.2025-01-01T00:00:00Z