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Showing results 1 to 8 of 8

Publication Year	Title	Author(s)	Department
2012	二氧化鋯、氧化釔4H碳化矽金氧半電容製作及分析 Fabrication and analysis of 4H-SiC MOS Capacitor with High-k Gate Dielectrics:ZrO2,Y2O3	Cheng-Yueh Chung; 鍾呈岳	工程科學及海洋工程學研究所
2015	以臨場原子層沉積術成長氧化釔於砷化鎵之結構及介面特性之研究 Investigation of structure and interfacial properties of In situ ALD-Y2O3 on GaAs	Kuanhsiung Chen; 陳冠雄	物理研究所
2018	分子束磊晶成長氧化釔/砷化銦鎵之金氧半電容及砷化鎵基反轉通道金氧半場效電晶體之電性研究 Electrical properties of MBE-Y2O3/In0.1Ga0.9As MOS capacitors and GaAs-based inversion-channel MOSFETs	Jun-Hao Huang; 黃俊豪	電子工程學研究所
2008	單一粒徑次微米球形氧化物螢光粉體之製備與分析 Synthesis and Properties Investigation of Mono-dispersed Submicron Spherical Oxide Phosphor Particles	Sung-En Lin; 林頌恩	材料科學與工程學研究所
2015	快速大氣噴射電漿燒結奈米孔隙氧化釔/奈米碳管複合材料 Rapid Atmospheric-Pressure-Plasma-Jet Sintered Nanoporous Y2O3/Carbon Nanotube Composites	Chih-Hung Wu; 吳志鴻	應用力學研究所
2014	氧化釔4H碳化矽金氧半電容在高溫下的特性分析 Analysis of 4H-SiC MOS Capacitor under High Temperature Measurement with High-k Gate Dielectrics：Y2O3	Yu-Hao Chang; 張育豪	工程科學及海洋工程學研究所
2025	異質介面電子結構用於半導體場效電晶體的 ALD Y2O3/GaAs介面研究 Hetero-interfacial electronic structures ALD Y2O3/GaAs for semiconductor field-effect transistors	陳婉馨; Wan-Sin Chen	應用物理研究所
2017	臨場方式原子層沉積高介電常數氧化物及金屬閘極之高性能砷化銦鎵自我對準反轉通道金氧半場效應電晶體之研究 High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited oxide and metal gate stacks	Min-Hao Chen; 陳旻浩	電子工程學研究所

Showing results 1 to 8 of 8