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| Publication Year | Title | Author(s) | Department |
|---|---|---|---|
| 2022 | 實現於0.25 μm氮化鎵高電子遷移率電晶體製程的5GHz改進隔離度開關與實現於90 nm金屬-氧化物半導體製程的V波段低雜訊放大器的研究 Research on 5 GHz Switch with Improved Isolation in 0.25 µm GaN HEMT Process and a V-Band Low Noise Amplifier in 90 nm CMOS Process | Pragya Tripathi; 計百佳 | 電信工程學研究所 |