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Publication Year	Title	Author(s)	Department
2012	二氧化鋯、氧化釔4H碳化矽金氧半電容製作及分析 Fabrication and analysis of 4H-SiC MOS Capacitor with High-k Gate Dielectrics:ZrO2,Y2O3	*Cheng-Yueh Chung; 鍾呈岳*	工程科學及海洋工程學研究所

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