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Publication Year	Title	Author(s)	Department
2015	以第一原理計算探討二氧化矽基材內的缺陷與摻雜以及高介電常數二氧化鉿絕緣層對二硫化鉬電子性質與其載子遷移率變化之影響 First-Principles Study of the Doping Effect on MoS2 from the Impurities and Intrinsic Point Defects in the underlying SiO2 Substrate and the Origin of the Enhanced Carrier Mobility by the Top High-k HfO2 Layers	*An Ho; 何安*	材料科學與工程學研究所

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