請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78049
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
dc.contributor.author | Huan-Yu Shih | en |
dc.contributor.author | 施奐宇 | zh_TW |
dc.date.accessioned | 2021-07-11T14:40:41Z | - |
dc.date.available | 2022-02-21 | |
dc.date.copyright | 2017-02-21 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-10-17 | |
dc.identifier.citation | Chapter 1
[1] V. N. Bliznetsov, L. K. Bera, H. Y. Soo, N. Balasubramanian, R. Kumar, G. Q. Lo, et al., 'Plasma etching for sub-45-nm TaN metal gates on high-k dielectrics,' IEEE Transactions on Semiconductor Manufacturing, vol. 20, pp. 143-149, May 2007. [2] M. Han, Y. Luo, D. A. Slater, J. E. Moryl, and R. M. Osgood, 'Atomic layer epitaxy (ALE) for II-VI material growth: A detail study of the surface chemistry,' Abstracts of Papers of the American Chemical Society, vol. 213, pp. 184-PHYS, Apr 13 1997. [3] T. Suntola, 'Atomic Layer Epitaxy. In Handbook of Crystal Growth, Vol. 3, Part B: Growth Mechanisms and Dynamics; Hurle, D. T. J., Ed.; Elsevier: Amsterdam,' 1994; Chapter 14. [4] R. Sitte, S. Dimitrijev, and H. B. Harrison, 'Relaxation of acceptance limits (RAL) - a global approach for parametric yield control of 0.1μm deep-submicron MOSFET Devices,' IEEE Transactions on Semiconductor Manufacturing, vol. 8, pp. 374-377, Aug 1995. [5] D. Vanderbilt, X. Y. Zhao, and D. Ceresoli, 'Structural and dielectric properties of crystalline and amorphous ZrO2,' Thin Solid Films, vol. 486, pp. 125-128, Aug 22 2005. [6] S. Xu and Z. L. Wang, 'One-dimensional ZnO nanostructures: Solution growth and functional properties,' Nano Research, vol. 4, pp. 1013-1098, Nov 2011. [7] S. Yamabi and H. Imai, 'Growth conditions for wurtzite zinc oxide films in aqueous solutions,' Journal of Materials Chemistry, vol. 12, pp. 3773-3778, 2002. [8] T. Weber, T. Kasebier, A. Szeghalmi, M. Knez, E. B. Kley, and A. Tunnermann, 'Iridium wire grid polarizer fabricated using atomic layer deposition,' Nanoscale Research Letters, vol. 6, pp. 1-4, Oct 25 2011. [9] H. B. Profijt, S. E. Potts, M. C. M. van de Sanden, and W. M. M. Kessels, 'Plasma-assisted atomic layer deposition: basics, opportunities, and challenges,' Journal of Vacuum Science & Technology A, vol. 29, Sep 2011. [10] T. Wang, Z. B. Luo, C. C. Li, and J. L. Gong, 'Controllable fabrication of nanostructured materials for photoelectrochemical water splitting via atomic layer deposition,' Chemical Society Reviews, vol. 43, pp. 7469-7484, Nov 21 2014. [11] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, pp. 111-131, Jan 2010. [12] J. W. Lim, H. S. Park, and S. W. Kang, 'Kinetic modeling of film growth rate in atomic layer deposition,' Journal of the Electrochemical Society, vol. 148, pp. C403-C408, Jun 2001. [13] J. S. Min, Y. W. Son, W. G. Kang, S. S. Chun, and S. W. Kang, 'Atomic layer deposition of TiN films by alternate supply of tetrakis(ethylmethylamino)-titanium and ammonia,' Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 37, pp. 4999-5004, Sep 1998. [14] S. B. S. Heil, P. Kudlacek, E. Langereis, R. Engeln, M. C. M. van de Sanden, and W. M. M. Kessels, 'In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3,' Applied Physics Letters, vol. 89, Sep 25 2006. [15] S. M. Rossnagel, A. Sherman, and F. Turner, 'Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers,' Journal of Vacuum Science & Technology B, vol. 18, pp. 2016-2020, Jul-Aug 2000. [16] H. Kim, 'Characteristics and applications of plasma enhanced-atomic layer deposition,' Thin Solid Films, vol. 519, pp. 6639-6644, Aug 1 2011. [17] H. Morkoc and Ü. Özgür, Zinc oxide : fundamentals, materials and device technology. Weinheim: Wiley-VCH, 2009. [18] H. Morkoc, Nitride semiconductors and devices. Berlin ; London: Springer Verlag, 1999. [19] H. Morkoç, 'Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth. Vol. 1. ,' John Wiley & Sons,, 2009. [20] O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, et al., 'Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,' Journal of Applied Physics, vol. 87, pp. 334-344, Jan 1 2000. [21] J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, 'Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors,' Applied Physics Letters, vol. 77, pp. 250-252, Jul 10 2000. [22] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, 'P-Type conduction in Mg-Doped GaN treated with low-energy electron-beam irradiation (LEEBI),' Japanese Journal of Applied Physics Part 2-Letters, vol. 28, pp. L2112-L2114, Dec 1989. [23] S. Nakamura, T. Mukai, and M. Senoh, 'High-power GaN P-N-junction blue-light-emitting diodes,' Japanese Journal of Applied Physics Part 2-Letters, vol. 30, pp. L1998-L2001, Dec 1 1991. [24] Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, et al., 'Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate,' IEEE Transactions on Microwave Theory and Techniques, vol. 52, pp. 2536-2540, Nov 2004. Chapter 2 [1] S. Nakamura, K. Tajima, and Y. Sugimoto, 'Experimental investigation on high-speed switching characteristics of a novel symmetrical Mach-Zehnder all-optical switch,' Applied Physics Letters, vol. 65, pp. 283-285, Jul 18 1994. [2] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, et al., 'InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates,' Applied Physics Letters, vol. 68, pp. 2105-2107, Apr 8 1996. [3] M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, 'High-Electron-Mobility transistor based on a GaN-AlxGa1-XN heterojunction,' Applied Physics Letters, vol. 63, pp. 1214-1215, Aug 30 1993. [4] M. A. Khan, J. N. Kuznia, J. M. Vanhove, D. T. Olson, S. Krishnankutty, and R. M. Kolbas, 'Growth of high optical and electrical quality gan layers using low-pressure metalorganic chemical vapor-deposition,' Applied Physics Letters, vol. 58, pp. 526-527, Feb 4 1991. [5] B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J. L. Rouviere, 'Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN,' Physical Review B, vol. 56, pp. R7069-R7072, Sep 15 1997. [6] R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, et al., 'Growth of epitaxial GaN films by pulsed laser deposition,' Applied Physics Letters, vol. 71, pp. 102-104, Jul 7 1997. [7] H. Ishikawa, K. Yamamoto, T. Egawa, T. Soga, T. Jimbo, and M. Umeno, 'Thermal stability of GaN on (111) Si substrate,' Journal of Crystal Growth, vol. 189, pp. 178-182, Jun 1998. [8] A. Dadgar, M. Poschenrieder, J. Blasing, O. Contreras, F. Bertram, T. Riemann, et al., 'MOVPE growth of GaN on Si(111) substrates,' Journal of Crystal Growth, vol. 248, pp. 556-562, Feb 2003. [9] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, pp. 111-131, Jan 2010. [10] M. E. Alnes, E. Monakhov, H. Fjellvag, and O. Nilsen, 'Atomic layer deposition of copper oxide using copper(II) acetylacetonate and ozone,' Chemical Vapor Deposition, vol. 18, pp. 173-178, Jun 2012. [11] X. F. Li, X. B. Meng, J. Liu, D. S. Geng, Y. Zhang, M. N. Banis, et al., 'Tin oxide with controlled morphology and crystallinity by atomic layer deposition onto graphene nanosheets for enhanced lithium storage,' Advanced Functional Materials, vol. 22, pp. 1647-1654, Apr 24 2012. [12] Y. J. Hwang, C. Hahn, B. Liu, and P. D. Yang, 'Photoelectrochemical properties of TiO2 nanowire arrays: a study of the dependence on length and atomic layer deposition coating,' Acs Nano, vol. 6, pp. 5060-5069, Jun 2012. [13] L. Song, L. J. Ci, H. Lu, P. B. Sorokin, C. H. Jin, J. Ni, et al., 'Large scale growth and characterization of atomic hexagonal boron nitride layers,' Nano Letters, vol. 10, pp. 3209-3215, Aug 2010. [14] N. Nepal, S. B. Qadri, J. K. Hite, N. A. Mahadik, M. A. Mastro, and C. R. Eddy, 'Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy,' Applied Physics Letters, vol. 103, Aug 19 2013. [15] C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, 'Atomic layer deposition of GaN at low temperatures,' Journal of Vacuum Science & Technology A, vol. 30, Jan 2012. [16] M. Kariniemi, J. Niinisto, T. Hatanpaa, M. Kemell, T. Sajavaara, M. Ritala, et al., 'Plasma-enhanced atomic layer deposition of silver thin films,' Chemistry of Materials, vol. 23, pp. 2901-2907, Jun 14 2011. [17] M. A. Khan, R. A. Skogman, J. M. Vanhove, D. T. Olson, and J. N. Kuznia, 'Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor-deposition,' Applied Physics Letters, vol. 60, pp. 1366-1368, Mar 16 1992. [18] N. H. Karam, T. Parodos, P. Colter, D. Mcnulty, W. Rowland, J. Schetzina, et al., 'Growth of device-quality GaN at 550oc by atomic layer epitaxy,' Applied Physics Letters, vol. 67, pp. 94-96, Jul 3 1995. [19] H. Tsuchiya, M. Akamatsu, M. Ishida, and F. Hasegawa, 'Layer-by-layer growth of GaN on GaAs substrates by alternate supply of GaCl3 and NH3,' Japanese Journal of Applied Physics Part 2-Letters, vol. 35, pp. L748-L750, Jun 15 1996. [20] O. H. Kim, D. Kim, and T. Anderson, 'Atomic layer deposition of GaN using GaCl3 and NH3,' Journal of Vacuum Science & Technology A, vol. 27, pp. 923-928, Jul 2009. [21] V. Miikkulainen, M. Leskela, M. Ritala, and R. L. Puurunen, 'Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends,' Journal of Applied Physics, vol. 113, Jan 14 2013. [22] A. Saxler, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, et al., 'Comparison of trimethylgallium and triethylgallium for the growth of GaN,' Applied Physics Letters, vol. 71, pp. 3272-3274, Dec 1 1997. [23] K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, S. L. Wu, and M. Pilkuhn, 'Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application,' Materials Chemistry and Physics, vol. 134, pp. 899-904, Jun 15 2012. [24] J. Nishizawa, H. Abe, T. Kurabayashi, and N. Sakurai, 'Photostimulated molecular layer epitaxy,' Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 4, pp. 706-710, May-Jun 1986. [25] K. S. Siow, L. Britcher, S. Kumar, and H. J. Griesser, 'Plasma methods for the generation of chemically reactive surfaces for biomolecule immobilization and cell colonization - A review,' Plasma Processes and Polymers, vol. 3, pp. 392-418, Aug 15 2006. [26] M. Bosund, T. Sajavaara, M. Laitinen, T. Huhtio, M. Putkonen, V. M. Airaksinen, et al., 'Properties of AlN grown by plasma enhanced atomic layer deposition,' Applied Surface Science, vol. 257, pp. 7827-7830, Jun 15 2011. [27] C. D. Wagner, Handbook of x-ray photoelectron spectroscopy. [S.l.]: Perkin Elmer Corp, Eden Prairie, 1979. [28] M. Dinescu, P. Verardi, C. Boulmer-Leborgne, C. Gerardi, L. Mirenghi, and V. Sandu, 'GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere,' Applied Surface Science, vol. 127, pp. 559-563, May 1998. [29] F. Shi, H. Li, and C. S. Xue, 'Fabrication of GaN nanowires and nanorods catalyzed with tantalum,' Journal of Materials Science-Materials in Electronics, vol. 21, pp. 1249-1254, Dec 2010. [30] J. Hedman and N. Martensson, 'Gallium nitride studied by electron-spectroscopy,' Physica Scripta, vol. 22, pp. 176-178, 1980. [31] C. Ozgit-Akgun, E. Goldenberg, A. K. Okyay, and N. Biyikli, 'Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures,' Journal of Materials Chemistry C, vol. 2, pp. 2123-2136, 2014. Chapter 3 [1] S. Nakamura, T. Mukai, and M. Senoh, 'High-power GaN p-n junction blue-light-emitting diodes,' Japanese Journal of Applied Physics Part 2-Letters, vol. 30, pp. L1998-L2001, Dec 1 1991. [2] I. Akasaki and H. Amano, 'Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode,' Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 45, pp. 9001-9010, Dec 2006. [3] H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, 'P-type conduction in Mg-doped gaN treated with low-energy electron-beam irradiation (LEEBI),' Japanese Journal of Applied Physics Part 2-Letters, vol. 28, pp. L2112-L2114, Dec 1989. [4] S. Nakamura, M. Senoh, and T. Mukai, 'P-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes,' Japanese Journal of Applied Physics Part 2-Letters, vol. 32, pp. L8-L11, Jan 15 1993. [5] M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, 'High-electron-mobility transistor based on a GaN-AlxGa1-XN heterojunction,' Applied Physics Letters, vol. 63, pp. 1214-1215, Aug 30 1993. [6] X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, et al., 'Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells,' Applied Physics Letters, vol. 72, pp. 692-694, Feb 9 1998. [7] K. Watanabe, J. R. Yang, S. Y. Huang, K. Inoke, J. T. Hsu, R. C. Tu, et al., 'Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN,' Applied Physics Letters, vol. 82, pp. 718-720, Feb 3 2003. [8] M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, 'Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers,' Journal of Applied Physics, vol. 99, Apr 1 2006. [9] A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, et al., 'Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency,' Physical Review Letters, vol. 95, Sep 16 2005. [10] T. Wang, Y. H. Liu, Y. B. Lee, Y. Izumi, J. P. Ao, J. Bai, et al., 'Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes,' Journal of Crystal Growth, vol. 235, pp. 177-182, Feb 2002. [11] K. Ban, J. Yamamoto, K. Takeda, K. Ide, M. Iwaya, T. Takeuchi, et al., 'Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells,' Applied Physics Express, vol. 4, May 2011. [12] S. Y. Karpov and Y. N. Makarov, 'Dislocation effect on light emission efficiency in gallium nitride,' Applied Physics Letters, vol. 81, pp. 4721-4723, Dec 16 2002. [13] T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, et al., 'Recent progress of nitride-based light emitting devices,' Physica Status Solidi a-Applied Research, vol. 200, pp. 52-57, Nov 2003. [14] T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochiduki, T. Nakamura, et al., 'Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: A new approach for growing low-dislocation-density GaN single crystals,' Japanese Journal of Applied Physics Part 2-Letters & Express Letters, vol. 40, pp. L16-L19, Jan 15 2001. [15] M. Kuball, M. Benyoucef, B. Beaumont, and P. Gibart, 'Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary,' Journal of Applied Physics, vol. 90, pp. 3656-3658, Oct 1 2001. [16] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, pp. 111-131, Jan 2010. [17] R. L. Puurunen, 'Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,' Journal of Applied Physics, vol. 97, Jun 15 2005. [18] H. B. Profijt, S. E. Potts, M. C. M. van de Sanden, and W. M. M. Kessels, 'Plasma-assisted atomic layer deposition: basics, opportunities, and challenges,' Journal of Vacuum Science & Technology A, vol. 29, Sep 2011. [19] M. Leskela and M. Ritala, 'Atomic layer deposition (ALD): from precursors to thin film structures,' Thin Solid Films, vol. 409, pp. 138-146, Apr 22 2002. [20] B. S. Lim, A. Rahtu, and R. G. Gordon, 'Atomic layer deposition of transition metals,' Nature Materials, vol. 2, pp. 749-754, Nov 2003. [21] H. Y. Shih, M. C. Lin, L. Y. Chen, and M. J. Chen, 'Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition,' Nanotechnology, vol. 26, Jan 9 2015. [22] C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, 'Atomic layer deposition of GaN at low temperatures,' Journal of Vacuum Science & Technology A, vol. 30, Jan 2012. [23] C. Ozgit-Akgun, E. Goldenberg, A. K. Okyay, and N. Biyikli, 'Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures,' Journal of Materials Chemistry C, vol. 2, pp. 2123-2136, 2014. [24] C. O.-A. S. Bolat, B. Tekcan, N. Biyikli, and A. K. Okyay, 'Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels,' Applied Physics Letters, vol. 104, p. 243505, 2014. [25] V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, et al., 'Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,' Journal of Applied Physics, vol. 82, pp. 5097-5102, Nov 15 1997. [26] V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, et al., 'Phonon dispersion and Raman scattering in hexagonal GaN and AlN,' Physical Review B, vol. 58, pp. 12899-12907, Nov 15 1998. [27] T. Sasaki and S. Zembutsu, 'Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy,' Journal of Applied Physics, vol. 61, pp. 2533-2540, Apr 1 1987. [28] X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, et al., 'Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN,' Applied Physics Letters, vol. 68, pp. 1371-1373, Mar 4 1996. [29] J. Narayan, P. Pant, A. Chugh, H. Choi, and J. C. C. Fan, 'Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures,' Journal of Applied Physics, vol. 99, Mar 1 2006. [30] A. Hushur, M. H. Manghnani, and J. Narayan, 'Raman studies of GaN/sapphire thin film heterostructures,' Journal of Applied Physics, vol. 106, Sep 1 2009. [31] D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang, 'Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire,' Applied Physics Letters, vol. 83, pp. 677-679, Jul 28 2003. [32] T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, 'Characterization of threading dislocations in GaN epitaxial layers,' Applied Physics Letters, vol. 76, pp. 3421-3423, Jun 5 2000. [33] D. Ehrentraut, E. Meissner, and M. Bockowski, Technology of gallium nitride crystal growth. Heidelberg: Springer, 2010. [34] Y. Andre, A. Trassoudaine, J. Tourret, R. Cadoret, E. Gil, D. Castelluci, et al., 'Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers,' Journal of Crystal Growth, vol. 306, pp. 86-93, Aug 1 2007. [35] T. Sugahara, H. Sato, M. S. Hao, Y. Naoi, S. Kurai, S. Tottori, et al., 'Direct evidence that dislocations are non-radiative recombination centers in GaN,' Japanese Journal of Applied Physics Part 2-Letters, vol. 37, pp. L398-L400, Apr 1 1998. [36] Y. Harada, T. Hikosaka, S. Kimura, M. Sugai, H. Nago, K. Tachibana, et al., 'Effect of dislocation density on efficiency curves in InGaN/GaN multiple quantum well light-emitting diodes,' in SPIE OPTO, 2012, pp. 82780J-82780J-6. [37] M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, et al., 'Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,' Applied Physics Letters, vol. 91, Dec 3 2007. Chapter 4 [1] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, pp. 111-131, Jan 2010. [2] O. Sneh, R. B. Clark-Phelps, A. R. Londergan, J. Winkler, and T. E. Seidel, 'Thin film atomic layer deposition equipment for semiconductor processing,' Thin Solid Films, vol. 402, pp. 248-261, Jan 1 2002. [3] D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, et al., 'Atomic structure of conducting nanofilaments in TiO2 resistive switching memory,' Nature Nanotechnology, vol. 5, pp. 148-153, Feb 2010. [4] G. K. Hyde, S. D. McCullen, S. Jeon, S. M. Stewart, H. Jeon, E. G. Loboa, et al., 'Atomic layer deposition and biocompatibility of titanium nitride nano-coatings on cellulose fiber substrates,' Biomedical Materials, vol. 4, p. 025001, Apr 2009. [5] J. H. Shim, C. C. Chao, H. Huang, and F. B. Prinz, 'Atomic layer deposition of yttria-stabilized zirconia for solid oxide fuel cells,' Chemistry of Materials, vol. 19, pp. 3850-3854, Jul 24 2007. [6] M. Kawasaki, C. N. Hsiao, J. R. Yang, and M. Shiojiri, 'Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions,' Micron, vol. 74, pp. 8-14, Jul 2015. [7] W. C. Wang, C. W. Lin, H. J. Chen, C. W. Chang, J. J. Huang, M. J. Yang, et al., 'Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition,' Acs Applied Materials & Interfaces, vol. 5, pp. 9752-9759, Oct 9 2013. [8] M. Leskela and M. Ritala, 'Atomic layer deposition (ALD): from precursors to thin film structures,' Thin Solid Films, vol. 409, pp. 138-146, Apr 22 2002. [9] V. Miikkulainen, M. Leskela, M. Ritala, and R. L. Puurunen, 'Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends,' Journal of Applied Physics, vol. 113, Jan 14 2013. [10] S. N. Okuno, S. Hashimoto, and K. Inomata, 'Preferred crystal orientation of cobalt ferrite thin-films induced by ion-bombardment during deposition,' Journal of Applied Physics, vol. 71, pp. 5926-5929, Jun 15 1992. [11] D. N. Tran, V. P. Nguyen, T. Sasaki, T. Kikuchi, and N. Harada, 'Temperature analysis of copper wire in a plasma annealing system at atmospheric pressure,' Japanese Journal of Applied Physics, vol. 50, p. 036202, Mar 2011. [12] S. Shimizu and S. Komiya, 'Effects of Ga and Si ionization on the growth of Ga doped Si MBE,' Journal of Vacuum Science & Technology, vol. 18, pp. 765-768, 1981. [13] H. Hirayama, 'Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes,' Journal of Applied Physics, vol. 97, p. 091101, May 1 2005. [14] R. B. Karabalin, M. H. Matheny, X. L. Feng, E. Defay, G. Le Rhun, C. Marcoux, et al., 'Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films,' Applied Physics Letters, vol. 95, p. 103111, Sep 7 2009. [15] F. Serina, K. Y. S. Ng, C. Huang, G. W. Auner, L. Rimai, and R. Naik, 'Pd/AlN/SiC thin-film devices for selective hydrogen sensing,' Applied Physics Letters, vol. 79, pp. 3350-3352, Nov 12 2001. [16] L. Shen, S. Heikman, B. Moran, R. Coffie, N. Q. Zhang, D. Buttari, et al., 'AlGaN/AlN/GaN high-power microwave HEMT,' IEEE Electron Device Letters, vol. 22, pp. 457-459, Oct 2001. [17] R. G. Banal, M. Funato, and Y. Kawakamia, 'Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy,' Applied Physics Letters, vol. 92, p. 241905, Jun 16 2008. [18] R. G. Banal, Y. Akashi, K. Matsuda, Y. Hayashi, M. Funato, and Y. Kawakami, 'Crack-free thick AlN films obtained by NH3 nitridation of sapphire substrates,' Japanese Journal of Applied Physics, vol. 52, p. 08JB21, Aug 2013. [19] C. Ozgit, I. Donmez, M. Alevli, and N. Biyikli, 'Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition,' Thin Solid Films, vol. 520, pp. 2750-2755, Jan 31 2012. [20] A. P. Perros, H. Hakola, T. Sajavaara, T. Huhtio, and H. Lipsanen, 'Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition,' Journal of Physics D-Applied Physics, vol. 46, p. 505502, Dec 18 2013. [21] S. Goerke, M. Ziegler, A. Ihring, J. Dellith, A. Undisz, M. Diegel, et al., 'Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma,' Applied Surface Science, vol. 338, pp. 35-41, May 30 2015. [22] H. V. Bui, F. B. Wiggers, A. Gupta, M. D. Nguyen, A. A. I. Aarnink, M. P. de Jong, et al., 'Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films,' Journal of Vacuum Science & Technology A, vol. 33, p. 01A111, Jan 2015. [23] N. Nepal, S. B. Qadri, J. K. Hite, N. A. Mahadik, M. A. Mastro, and C. R. Eddy, 'Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy,' Applied Physics Letters, vol. 103, Aug 19 2013. [24] M. Bosund, T. Sajavaara, M. Laitinen, T. Huhtio, M. Putkonen, V. M. Airaksinen, et al., 'Properties of AlN grown by plasma enhanced atomic layer deposition,' Applied Surface Science, vol. 257, pp. 7827-7830, Jun 15 2011. [25] J. Keckes, S. Six, W. Tesch, R. Resel, and B. Rauschenbach, 'Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0001) sapphire by pulsed laser ablation,' Journal of crystal growth, vol. 240, pp. 80-86, 2002. [26] M. J. Liu and H. K. Kim, 'Ultraviolet detection with ultrathin ZnO epitaxial films treated with oxygen plasma,' Applied Physics Letters, vol. 84, pp. 173-175, Jan 12 2004. [27] X. J. Sun, D. B. Li, Y. R. Chen, H. Song, H. Jiang, Z. M. Li, et al., 'In situ observation of two-step growth of AlN on sapphire using high-temperature metal-organic chemical vapour deposition,' Crystengcomm, vol. 15, pp. 6066-6073, 2013. [28] Y. C. Her and C. W. Chen, 'Crystallization kinetics of ultrathin amorphous Si film induced by Al metal layer under thermal annealing and pulsed laser irradiation,' Journal of Applied Physics, vol. 101, pp. 43518-43518, Feb 15 2007. [29] H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessele, 'Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth,' Journal of Vacuum Science & Technology A, vol. 31, Jan-Feb 2013. [30] S.-H. Lee, K. H. Yoon, D.-S. Cheong, and J.-K. Lee, 'Relationship between residual stress and structural properties of AlN films deposited by rf reactive sputtering,' Thin Solid Films, vol. 435, pp. 193-198, 2003. [31] J. Oliveira, A. Cavaleiro, and M. Vieira, 'Influence of Al (Er) interlayer on the mechanical properties of AlN (Er) coatings,' Surface and Coatings Technology, vol. 151, pp. 466-470, 2002. [32] D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Höpler, R. Dimitrov, et al., 'Optical constants of epitaxial AlGaN films and their temperature dependence,' Journal of applied physics, vol. 82, pp. 5090-5096, 1997. [33] Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, 'Systematic measurement of AlxGa1− xN refractive indices,' Applied Physics Letters, vol. 79, 2001. [34] M. A. Khan, J. N. Kuznia, J. M. Vanhove, N. Pan, and J. Carter, 'Observation of a 2-dimensional electron gas in low-pressure metalorganic chemical vapor-deposited GaN-AlxGa1-XN heterojunctions,' Applied Physics Letters, vol. 60, pp. 3027-3029, Jun 15 1992. Chapter 5 [1] S. F. Yu, R. M. Lin, S. J. Chang, and F. C. Chu, 'Efficiency droop characteristics in InGaN-Based Near ultraviolet-to-blue light-emitting diodes,' Applied Physics Express, vol. 5, Feb 2012. [2] D. H. Kim, V. Kumar, G. Chen, A. M. Dabiran, A. M. Wowchak, A. Osinsky, et al., 'ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC,' Electronics Letters, vol. 43, pp. 127-128, Jan 18 2007. [3] W. Lu, J. W. Yang, M. A. Khan, and I. Adesida, 'AlGaN/GaN HEMTs on SiC with over 100 GHz f(T) and low microwave noise,' IEEE Transactions on Electron Devices, vol. 48, pp. 581-585, Mar 2001. [4] O. I. Saadat, J. W. Chung, E. L. Piner, and T. Palacios, 'Gate-first AlGaN/GaN HEMT technology for high-frequency applications,' IEEE Electron Device Letters, vol. 30, pp. 1254-1256, Dec 2009. [5] H. C. Chiu, C. W. Yang, Y. H. Lin, R. M. Lin, L. B. Chang, and K. Y. Horng, 'Device characteristics of AlGaN/GaN MOS-HEMTs using high-k praseodymium oxide layer,' IEEE Transactions on Electron Devices, vol. 55, pp. 3305-3309, Nov 2008. [6] R. M. Lin, F. C. Chu, A. Das, S. Y. Liao, S. T. Chou, and L. B. Chang, 'Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric,' Thin Solid Films, vol. 544, pp. 526-529, Oct 1 2013. [7] D. Meng, S. X. Lin, C. P. Wen, M. J. Wang, J. Y. Wang, Y. L. Hao, et al., 'Low leakage current and high-cutoff frequency AlGaN/GaN MOSHEMT using submicrometer-footprint thermal oxidized TiO2/NiO as gate dielectric,' IEEE Electron Device Letters, vol. 34, pp. 738-740, Jun 2013. [8] H. J. Quah and K. Y. Cheong, 'Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate,' Acs Applied Materials & Interfaces, vol. 5, pp. 6860-6863, Aug 14 2013. [9] C. Liu, E. F. Chor, and L. S. Tan, 'Investigations of HfO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors,' Applied Physics Letters, vol. 88, Apr 24 2006. [10] H. Zhou, G. I. Ng, Z. H. Liu, and S. Arulkumaran, 'Improved device performance by post-oxide annealing in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor on Si,' Applied Physics Express, vol. 4, Oct 2011. [11] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, pp. 111-131, Jan 2010. [12] E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, 'High-resolution depth profiling in ultrathin Al2O3 films on Si,' Applied Physics Letters, vol. 76, pp. 176-178, Jan 10 2000. [13] B. H. Lee, L. G. Kang, R. Nieh, W. J. Qi, and J. C. Lee, 'Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing,' Applied Physics Letters, vol. 76, pp. 1926-1928, Apr 3 2000. [14] M. Copel, M. Gribelyuk, and E. Gusev, 'Structure and stability of ultrathin zirconium oxide layers on Si(001),' Applied Physics Letters, vol. 76, pp. 436-438, Jan 24 2000. [15] X. W. Wang, O. I. Saadat, B. Xi, X. B. Lou, R. J. Molnar, T. Palacios, et al., 'Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices,' Applied Physics Letters, vol. 101, Dec 3 2012. [16] D. W. Choi, K. B. Chung, and J. S. Park, 'Low temperature Ga2O3 atomic layer deposition using gallium tri-isopropoxide and water,' Thin Solid Films, vol. 546, pp. 31-34, Nov 1 2013. [17] S. A. Lee, J. Y. Hwang, J. P. Kim, C. R. Cho, W. J. Lee, and S. Y. Jeong, 'Metal/insulator/semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition,' Journal of the Korean Physical Society, vol. 47, pp. S292-S295, Sep 2005. [18] F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, 'Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition,' Journal of Applied Physics, vol. 98, Jul 15 2005. [19] D. J. Comstock and J. W. Elam, 'Atomic layer deposition of Ga2O3 films using trimethylgallium and ozone,' Chemistry of Materials, vol. 24, pp. 4011-4018, Nov 13 2012. [20] I. Donmez, C. Ozgit-Akgun, and N. Biyikli, 'Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma,' Journal of Vacuum Science & Technology A, vol. 31, Jan-Feb 2013. [21] J. F. Moulder and J. E. Chastain, Handbook of X-ray photoelectron spectroscopy : a reference book of standard spectra for identification and interpretation of XPS data. Eden Prairie, MN: Perkin-Elmer Corporation, Physical Electronics Division, 1992. [22] A. V. Osipov, F. Schmitt, and P. Hess, 'Real-time analysis of wetting-layer evolution and island nucleation using spectroscopic ellipsometry with Tauc-Lorentz parametrization,' Thin Solid Films, vol. 472, pp. 31-36, Jan 24 2005. [23] M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. G. Chu, et al., 'Ga2O3 films for electronic and opto | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78049 | - |
dc.description.abstract | 由於原子層沉積(ALD)技術具有高均勻性、可精確控制厚度與高覆蓋度…等等優點,因此被廣泛應用於新世代的光電與電子元件上。本論文研究使用ALD技術加上輔助電漿或退火處理成長出高品質III族氮化物與氧化物薄膜,並將之應用在三五族元件的製程改良與開發上。
本研究首先開發以ALD成長氮化鎵(GaN)之製程。藉由調整製程中前驅物的劑量可以發現此製程具有自限成膜的特性。同時薄膜沉積厚度與ALD的圈數亦成線性關係。此外,可以發現製程溫度的增加會提升薄膜的結晶性,使之從非晶態轉為多晶態,同時薄膜的沉積速率以及氮含量比例亦隨著溫度上升而增加。 接著經由研究發現,在適當退火條件下,可以在藍寶石基板上長出高品質氮化鎵薄膜,並可以將其作為高溫GaN磊晶的緩衝層。此緩衝層在高溫磊晶過程中會將因晶格不匹配而產生的缺陷侷限在靠近基板約10 nm區域,同時使薄膜上層保持良好的結晶品質,藉此大幅降低GaN磊晶層中的缺陷密度至2.2 × 105 cm−2。此高品質磊晶層在進一步成長InGaN/GaN發光二極體結構時,可以有效降低非輻射復合的機率,進而提高二極體發光的效率。 接著,利用原子層磊晶技術,以ALD成長高結晶品質的氮化物薄膜。由X光繞射圖譜與高解析電子穿透顯微鏡影像可以發現,此氮化物薄膜表現出單晶結構。 最後部分討論將ALD成長之氧化鎵薄膜應用於AlGaN/GaN HEMT。藉由調整製程參數成長出高品質之氧化鎵薄膜,使之作為HEMT的介電層以及鈍化層。此氧化鎵具有高均勻度以及高包覆度的特性,同時與GaN可形成良好的介面,因此可以有效提升HEMT元件特性。與傳統HEMT比較,在加入此氧化層後,元件的IV特性及次臨限擺幅(Subthreshold Swing, S.S.)均明顯優化,同時使用此氧化層可以大幅降低元件之漏電流並提升元件的崩潰電壓,元件的特性具有明顯優化。 | zh_TW |
dc.description.abstract | Nowadays, atomic layer deposition (ALD) becomes a promising technique to obtain uniform films in nanoscale which is widely applied in optical and electrical devices. Result from the self-limiting behavior and layer-by layer growth, films grown by the ALD offer several benefits such as easy and precise thickness control, low defect density, excellent step coverage and conformality, good reproducibility, high uniformity over a large area, and low deposition temperature. In this dissertation, the characteristics of GaN and AlN films grown by ALD and its application in light emitting diodes (LED) and high electron mobility transistor (HEMT) was demonstrated.
At first, the effects of modifying the ALD parameters to characteristics of GaN films were studied. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH3 and the linear dependence between film thickness and ALD cycle. It was found that the increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200oC to polycrystalline hexagonal structures at a high growth temperature of 500oC. Moreover, we reported InGaN/GaN LEDs with ultralow threading dislocation (TD) density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by ALD. In general, the large lattice mismatch between GaN epilayer and the substrate results to high density of defects in it, and then causes a major obstacle for the further improvement of solid-state lighting and high-power electronics. However, this “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. The ultra low TD density in GaN resulted in the improvement of efficiency and performance of InGaN/GaN LED on it. Atomic layer epitaxy of nitride ultrathin films was realized by ALD. The X-ray diffraction reveals high crystalline quality of the nitride ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the nitride epitaxial layer. Finally, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films showed excellent uniformity and smooth interface between Ga2O3 and GaN. Then an ALD Ga2O3 film was used as the gate dielectric and surface passivation layer in a metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device characteristics superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT. The subthreshold swing (SS) and breakdown voltage of the MOS-HEMT were 110 mV decade–1 lower and 44 V higher compared to conventioal HEMT. Those indicate that Ga2O3 is a good candidate for the gate dielectric and passivation layer of AlGaN/GaN HEMT | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:40:41Z (GMT). No. of bitstreams: 1 ntu-105-F00527034-1.pdf: 5616038 bytes, checksum: fd2de31d538696b7b545504d450c6dcd (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | Content
口試委員會審定書 i 誌謝 ii 摘要 iv Abstract vi Content ix List of Figures xi List of Tables xv Chapter 1. Introduction 1 1.1 Motivation 1 1.2 Atomic Layer Deposition 3 1.2.1 Introduction 3 1.2.2 Benefits of ALD 7 1.2.3 Characteristics of ALD 7 1.2.4 Plasma enhanced ALD 11 1.3 III-Nitride Materials 15 1.3.1 Crystal structure of nitrides 15 1.3.2 Characteristics of GaN and AlN 16 1.3.3 Difficulty in growing single crystal GaN 17 1.3.4 Polarization and Two dimensional electron gas in III-nitride hetero-structure 18 1.4 III-nitride application 21 1.4.1 InGaN/GaN blue LED 21 1.4.2 AlGaN/GaN High electron mobility transistor 22 1.5 Organization of this dissertation 22 1.6 Reference 24 Chapter 2. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition 29 2.1 Introduction 29 2.2 Experimental Section 32 2.3 Results and Discussion 34 2.4 Conclusion 44 2.5 Reference 45 Chapter 3. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs 51 3.1 Introduction 51 3.2 Experimental Section 54 3.3 Results and Discussion 58 3.3.1 Characteristics of the ALD GaN compliant buffer layer 58 3.3.2 Structural characteristics of the GaN/sapphire interface 66 3.3.3 Reduction in threading dislocation density in the GaN epilayer 70 3.3.4 Electrical and optical characteristics of the InGaN/GaN LEDs 72 3.4 Conclusion 76 3.5 Reference 77 Chapter 4. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing 84 4.1 Introduction 84 4.2 Experimental section 88 4.2.1 ALD process 88 4.2.2 Atomic layer annealing 88 4.2.3 Measurement 89 4.3 Result and discussion 90 4.3.1 The growth rate, uniformity, roughness, and surface morphology of the ALA-treated AlN layer 91 4.3.2 Crystallinity of the ALA-treated AlN layer 94 4.3.3 Chemical composition and depth profile analysis of the ALA-treated AlN layer 101 4.3.4 Refractive index of the ALA-treated AlN layer 103 4.3.5 Electrical properties of the ALA-treated AlN layer 103 4.4 Conclusion 105 4.5 Reference 106 Chapter 5. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide– Semiconductor High-Electron-Mobility Transistors 113 5.1 Introduction 113 5.2 Experimental section 116 5.3 Results and Discussion 119 5.3.1Characteristics of ALD Ga2O3 119 5.3.2 Characteristics of Ga2O3 MOS HEMT 124 5.4 Conclusion 129 5.5 Reference 130 Chapter 6. Summary 136 Publication list 138 List of Figures Figure 1.1 Schematic representation of ALD process (Al2O3). 6 Figure 1.2 SEM images of the fabrication process. The over-coated polymer gratings by ALD (a) and sputter deposition (b) . 6 Figure 1.3 schematic diagram of dose saturation behavior in ALD process. 8 Figure 1.4 schematic diagram of thickness data plotted as a function of number of ALD cycles in ALD process. 9 Figure 1.5 Schematic of possible behavior for the ALD growth per cycle versus temperature showing the “ALD window”. 11 Figure 1.6 Schematic representation of CCP-ALD. 14 Figure 1.7 Schematic representation of ICP-ALD. 15 Figure 1.8 Stick-and-ball representations of III-Nitride crystal structures: (a) cubic rocksalt, (b) cubic zinc blende, and (c) hexagonal wurtzite. 16 Figure 1.9 Spontaneous polarization fields (PSP) and piezoelectric polarization fields (PPE) for AlGaN/GaN and GaN/AlGaN hetero-structure. 20 Figure 1.10 Energy band diagram of the HEMT showing the 2DEG quantum well channel. 20 Figure 2.1 The scheme setup of the RP-ALD system. 33 Figure 2.2 Dependence of GaN growth rate on the (a) TEG pulse time and (b) NH3 flow rate. 35 Figure 2.3 (a) The GaN growth rate at different deposition temperatures. (b) GaN film thickness as a function of the applied ALD cycles. The TEG pulse time is 0.12 sec and flow rate of NH3/H2 is 30/5 sccm. 36 Figure 2.4 Thickness distributions of the GaN thin films grown at 200 and 500 oC on 2-inch (100) Si substrate. The dash lines represent the average film thickness. 37 Figure 2.5 XRD patterns of GaN thin films grown at the deposition temperatures from 200 to 500 oC. 39 Figure 2.6 (a) N1s, (b) Ga2p3/2, (c) Ga3d, and (d) O1s XPS spectra of the GaN thin film grown at 500 oC. 41 Figure 2.7 Composition of GaN film grown on (100) Si at different temperature. 42 Figure 2.8 Cross-sectional HRTEM images of the GaN thin film grown at 500 oC. 43 Figure 2.9 The refractive index and extinction coefficient as a function of wavelength of the GaN thin film grown at 500 oC. 44 Figure 3.1 ALD process for growing the GaN BL on the (0001) sapphire substrate. 55 Figure 3.2 Schematic structure of the InGaN/GaN blue LED grown on the ALD complaint BL. 56 Figure 3.3 Dependence of GaN growth rate per ALD cycle on the TEG pulse time. The growth rate increases with the TEG dose and then saturates at ~0.077 nm/cycle when the TEG pulse time is greater than 0.5 sec, suggesting that the growth of GaN exhibited the self-limiting characteristics. 59 Figure 3.4 The film thickness and the pseudo-refractive index of the as-deposited GaN BL for different points on sapphire substrate with an effective area of 6-inch diameter. The positions #1~#9 were taken radially from the center with a spacing of ~1.5 inch. The pseudo refractive index was extracted by the spectroscopic ellipsometer at λ= 633 nm from the direct measurement on Ψ and Δ (the amplitude ratio and phase difference between p- and s-polarized light waves), based on an optical model which assumes a perfectly flat substrate with infinite thickness. 60 Figure 3.5 Characteristics of the ALD GaN buffer layer. (a) XRD patterns of the as-deposited and PDA-treated GaN BLs grown by RP-ALD together with that of the PDA-treated GaN NL grown by MOCVD. (b) Room-temperature micro-PL spectra of the PDA-treated ALD BL and the PDA-treated MOCVD NL. The magnified PL spectra are shown in the inset. 62 Figure 3.6 Raman analysis. (a) Micro-Raman spectra of the ALD compliant BL and MOCVD NL. The Raman peak at 578 cm-1 is ascribed to the sapphire substrate. The dashed line indicates the strain-free GaN E2 peak at 567.60 cm-1. (b-e) Two-dimensional micro-Raman mappings of the E2 peak in an area of 100 µm×100 µm. (b) and (c) show the Raman shift relative to the strain-free GaN E2 peak (Δω), and (d) and (e) show the Raman intensity, of the ALD compliant BL and MOCVD NL, respectively. 65 Figure 3.7 HRTEM images. (a, e) HRTEM images of the PDA-treated ALD compliant BL and sapphire substrate without the overlying GaN epilayer (a) and with the overlying GaN epilayer (e) grown by MOCVD. (b-d) FFT diffractograms of the areas enclosed in the upper and the bottom regions of the ALD compliant BL, and the sapphire in (a), respectively. (f, j) HRTEM images of the PDA-treated MOCVD NL and sapphire substrate without the overlying GaN epilayer (f) and with the overlying GaN epilayer (j) grown by MOCVD. A TD is indicated in (j), which was taken by a condition so as to excite exclusively the 0002 reflections and off any hki0 reflections of GaN. (g-i) FFT diffractograms of the areas enclosed in the upper and the bottom regions of the MOCVD NL, and the sapphire in (f), respectively. (k) and (l) show schematic diagrams of the ALD compliant BL and MOCVD NL, respectively. 69 Figure 3.8 EPD measurements. SEM images of EPs on the top surface of the n-GaN epilayer in the InGaN/GaN LEDs grown on the ALD compliant BL (a) and MOCVD NL (b). 71 Figure 3.9 XRD of the GaN epilayers. XRD rocking curves of (a) the symmetrical (002) and (b) symmetrical (102) reflections of the GaN epilayers grown on the ALD compliant BL and MOCVD NL. 72 Figure 3.10 PL spectra and intensities of the InGaN/GaN LEDs. (a) Room-temperature PL spectra of LEDs on the ALD compliant BL and MOCVD NL. (b) Arrhenius plot of the normalized integrated PL intensity of the LEDs on the ALD compliant BL and MOCVD NL. The PL measurement was carried out at temperatures from 20 to 300 K. 73 Figure 3.11 Electrical performances of the InGaN/GaN LEDs. (a) I–V curves of the InGaN/GaN LEDs grown on the ALD compliant BL and MOCVD NL. The inset shows the I–V characteristics of both the LEDs at reverse bias. (b) The forward biased I–V curves in the semi-long scale. 75 Figure 3.12 Optical performances of the InGaN/GaN LEDs. (a) EL intensity as a function of injection current from 1 to 400 mA of the InGaN/GaN LEDs grown on the ALD compliant BL and MOCVD NL. The inset represents a room-temperature EL spectrum of the LED grown on the ALD compliant BL. (b) The normalized EQE as a function of the injected current of the InGaN/GaN LEDs grown on the ALD compliant BL and MOCVD NL. 76 Figure 4.1 The schematic diagram of the modified ALD cycles for atomic layer epitaxy, with an additional step (5) of the Ar plasma treatment for in-situ ALA. 89 Figure 4.2 (a) The thickness of the ALA-treated AlN layer as a function of applied ALD cycles. (b) The growth rate of the ALA-treated AlN layer as a function of TMA pulse time. 90 Figure 4.3 The thickness of the ALA-treated AlN layer at different positions on the sapphire substrate with an effective area of 6-inch diameter. 93 Figure 4.4 AFM images of the (a) standard AlN and (b) ALA-treated AlN layers. 93 Figure 4.5 SEM micrograph of the ALA-treated AlN layer. 94 Figure 4.6 (a) XRD θ-2θ scans of the standard AlN layer, the AlN layer treated with post-deposition Ar plasma, and the in-situ ALA-treated AlN layer. (b) XRD ω-scan rocking curve of the (0002) AlN peak of the in-situ ALA-treated AlN layer with a thickness of only ~30 nm. 96 Figure 4.7 The θ-2θ XRD patterns of the AlN layers treated with the Ar plasma power of (a) 100 W, and (b) 300 W, and the treatment time of 10, 20, and 40 sec, during the in-situ ALA in each ALD cycle. 97 Figure 4.8 (a) The θ-2θ XRD pattern of the in-situ ALA-treated AlN layers with the delay time of 0, 5, 10, and 20 sec. (b) The AlN (0002) XRD peak intensity as a function of the delay time between the ALA treatment and the following TMA pulse. 99 Figure 4.9 (a) HRTEM image of the in-situ ALA-treated AlN epilayer grown on the sapphire substrate. (b–c) The FFT diffractograms of the areas enclosed in the AlN layer and sapphire, respectively. The threading dislocations are indicated by the dotted lines in (a). 101 Figure 4.10 (a) Direct and (b) differential Auger survey spectrum of the ALA-treated AlN layer. 102 Figure 4.11 The Auger depth profile of the ALA-treated AlN layer. 102 Figure 4.12 The refractive index as a function of wavelength of the 40 nm ALA-treated AlN film. 103 Figure 4.13 Sheet electron concentration and mobility of the AlN/GaN heterojunction, where the AlN layer was treated with the in-situ ALA with different plasma time of 0, 10, 20, and 40 sec. 105 Figure 5.1 Schematic representation of the ALD Ga2O3 deposition. 116 Figure 5.2 (a) Schematic representation of the cross-sectional structure of a Ga2O3/AlGaN/AlN/GaN HEMT. (b) Cross-sectional TEM image of a GaN/AlN/AlGaN/Ga2O3/Ni/Au structure. 119 Figure 5.3 (a) Growth rate of the Ga2O3 thin films plotted with respect to the TEG pulse time and plasma time. (b) Film thickness plotted with respect to the number of applied ALD cycles. 120 Figure 5.4 (a) Ga 3d and (b) O 1s XPS spectra of the Ga2O3 thin film. 121 Figure 5.5 Refractive index and extinction coefficient of the Ga2O3 thin film plotted with respect to the wavelength. 122 Figure 5.6 The GI-XRD pattern of the Ga2O3 films. 123 Figure 5.7 Atomic force microscopy images of the conventional HEMT and the Ga2O3 MOS-HEMT. 124 Figure 5.8 The capacitance-voltage (C-V) characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT. 125 Figure 5.9 IDS–VDS characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT upon varying the value of VG from –6 to +2 V at a step of +1 V. 125 Figure 5.10 (a) Transfer characteristics and (b) log IDS vs. VGS plots of the conventional HEMT and the Ga2O3 MOS-HEMT 128 Figure 5.11 (a) Gate leakage current and (b) three-terminal off-state breakdown characteristics of the conventional HEMT and the Ga2O3 MOS-HEMT. 129 List of Tables Table 1.1 Lattice parameters (a and c) and thermal expansion coefficient of a number of the prospective substrate materials for GaN growth. 17 Table 1.2 Lattice constants ratio, spontaneous polarization, piezoelectric, and dielectric constants of AlN and GaN. 19 Table 1.3 the characteristics of the first p–n junction GaN LED. 21 | |
dc.language.iso | en | |
dc.title | 使用原子層沉積技術成長高品質三族氮化物與氧化物應用於電子與光電元件之研究 | zh_TW |
dc.title | High Quality III-nitride and III–oxide Prepared by Atomic Layer Deposition and its Applications in Electronic and Optical Devices | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 林浩雄(Hao-Hsiung Lin),楊哲人(Jer-Ren Yang),林瑞明(Ray-Ming Lin),吳肇欣(Chao-Hsin Wu) | |
dc.subject.keyword | 原子層沉積,電漿,氮化鎵,氮化鋁,氧化鎵,緩衝層,發光二極體,高電子遷移率電晶體, | zh_TW |
dc.subject.keyword | atomic layer deposition (ALD),plasma,gallium nitride (GaN),aluminum nitride (AlN),gallium oxide (Ga2O3),buffer layer,light emitting diodes (LED),high electron mobility transistor (HEMT), | en |
dc.relation.page | 138 | |
dc.identifier.doi | 10.6342/NTU201603672 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2016-10-17 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-F00527034-1.pdf 目前未授權公開取用 | 5.48 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。