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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 顏溪成(Shi-Chern Yen) | |
dc.contributor.author | Mu-Huan Yang | en |
dc.contributor.author | 楊牧寰 | zh_TW |
dc.date.accessioned | 2021-06-16T17:23:05Z | - |
dc.date.available | 2017-08-19 | |
dc.date.copyright | 2012-08-19 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-16 | |
dc.identifier.citation | Ahn, Y., J.-Y. Yoon, et al. (2004). 'Chemical mechanical polishing by colloidal silica-based slurry for micro-scratch reduction.' Wear 257(7-8): 785-789.
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/63919 | - |
dc.description.abstract | 半導體製程中,隨著低介電常數之介電層的引入,傳統的平坦化技術,化學機械研磨(CMP)也面臨一些問題,如因過大的下壓力破壞了介電層的機械結構。有別於傳統CMP,電化學機械研磨(ECMP)可施加遠小於傳統CMP的下壓力進行研磨,並透過外加電場有效地提高移除速率。此外,隨著環保意識的抬頭,近年來ECMP已開發出不含氧化劑的研磨液系統,則可不需再使用對環境有害的氧化劑;ECMP更可在無研磨粒子下進行研磨,降低磨後清洗晶圓表面的製程複雜度以及汙染可能性。
本研究著重於銅的ECMP,並探討無額外添加氧化劑環境下,其在磷酸銨鹽系統中的電化學機械研磨時的最適化工作條件;除了利用直流極化技術外,也使用交流阻抗分析研究銅表面研磨時的動力學機制,更透過原子力學顯微鏡(AFM)了解研磨後銅表面平坦度以及組成成份。實驗結果顯示,磷酸銨鹽的酸鹼值若控制在pH 8時,銅表面生成鈍化層的效果最好;此外施加電壓0.4V時,相對應的電流較為穩定。加入咪唑後發現在0.3 wt%下有相對穩定的電流;而當使用苯咪唑作為抑制劑時,0.3 wt%的濃度可以較有效的抑制電流值。透過AFM量測表面平坦度後可發現,苯咪唑保護銅表面的效果較咪唑來的好。最後在加入研磨粒子的實驗結果中發現,雖然加入研磨粒子後,研磨速率提升了許多,但是另一方面,銅表面平坦度卻也降低,由此可看出加入研磨粒子並非改善平坦度的有效方法。 在本研究所得到的最佳工作條件下,亦即在pH值8的磷酸銨鹽溶液、0.3 wt%的苯咪唑添加、施加電壓0.4V、相對轉速300rpm以及施加下壓力0.6psi進行銅片的ECMP,可以得到最好的平坦化結果,其粗糙度為14.78nm。 | zh_TW |
dc.description.abstract | In this study, the electrochemical characteristics of Cu ECMP were investigated, and we also studied the best working condition during the process of Cu ECMP in ammonium phosphate slurry system. By performing electrochemical measurements such as polarization curves, current-time plot and impedance spectroscopy, the slurry compositions and electrochemical characteristics during ECMP were discussed; besides, surface morphological analysis after ECMP was carried out by atomic force microscopy (AFM). The experimental results showed that the effect of passivation on the Cu surface is better than others when the pH value of electrolyte is 8. As 0.4 voltage was applied during process, the current was more stable. In the case of adding imidazole as the inhibitor, the current would be more stable as the concentration of imidazole was chosen to be 0.3wt%. In the other case of adding benzimidazole as the inhibitor, the concentration of benzimidazole was also chosen to be 0.3wt% for the same reason. By the data of AFM, benzimidazole had better ability to protect Cu surface than imidazole. Finally, we found out that material removal rate would be enhanced by adding abrasive particles, but the effect on planarization of Cu surface would be reduced. So adding abrasive particles is not an effective way to improve the planarization.
The best result of planarization of Cu ECMP in our study is 14.78nm under the working condition: ammonium phosphate electrolyte at pH=8.0, concentration of benzimidazole = 0.3wt%, applied voltage = 0.4V, rotation speed = 300rpm, applied pressure = 0.6psi. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T17:23:05Z (GMT). No. of bitstreams: 1 ntu-101-R99524056-1.pdf: 4142460 bytes, checksum: 7a70789893d51c71a7948ac87314fa6d (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 摘要 I
ABSTRACT II 目錄 III 圖表目錄 V 第一章 緒論 1 1-1 銅導線製程的發展與挑戰 1 1-2 化學機械研磨介紹 3 1-3 在低應力發展趨勢下取代化學機械研磨的方法 5 1-4 研究動機 7 第二章 文獻回顧 17 2-1 金屬銅CMP的文獻回顧 17 2-2 阻障層Ta CMP的文獻回顧 19 2-3 金屬銅ECMP的文獻回顧 20 第三章 實驗設備與方法 33 3-1金屬銅電化學機械研磨的實驗程序 33 3-1-1 實驗試片前處理 33 3-1-2 研磨液配製 33 3-1-3 磨後研磨墊的調整 34 3-1-4 極化曲線與腐蝕動力學參數的量測 34 3-1-5 金屬移除速率的估算 35 3-1-6 交流阻抗分析 36 3-1-7 研磨前後的表面分析 37 (A) 掃瞄式電子顯微鏡(SEM)觀察試片表面型態 37 (B) 原子力顯微鏡(AFM)表面粗糙度分析 37 3-2 實驗裝置、儀器、藥品及耗材 39 3-2-1 實驗裝置 39 3-2-2 設備與儀器 39 3-2-3藥品與耗材 40 第四章 結果與討論 44 4-1磷酸銨研磨液系統對銅ECMP的影響 44 4-1-1 未添加任何抑制劑的系統 44 直流極化曲線分析 44 研磨前後表面型態的觀測 46 4-1-2 添加咪唑(imidazole)對銅ECMP的影響 47 適當咪唑添加濃度的探討 48 研磨前後表面型態的觀測 48 4-1-3 添加苯咪唑(benzimidazole)對銅ECMP的影響 49 適當苯咪唑添加濃度的探討 49 研磨前後表面型態的觀測 49 4-2 交流阻抗分析 50 4-3 研磨粒子對銅ECMP的影響 52 第五章 結論 85 參考文獻 86 | |
dc.language.iso | zh-TW | |
dc.title | 在磷酸銨鹽系統中電化學機械研磨金屬導線銅之電化學特性的研究 | zh_TW |
dc.title | The Study on Electrochemical Mechanical Polishing of Cu Metal Wire in Ammonium Phosphate System and Its Electrochemical Characteristics | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 周偉龍(Wei-Lung Chou),王勝仕(Sheng-Shih Wang) | |
dc.subject.keyword | 電化學機械研磨,腐蝕抑制劑,咪唑,苯咪唑, | zh_TW |
dc.subject.keyword | ECMP,corrosion inhibitor,imidazole,benzimidazole, | en |
dc.relation.page | 91 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-16 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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