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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林招松 | |
dc.contributor.author | Shao-Sian Li | en |
dc.contributor.author | 李紹先 | zh_TW |
dc.date.accessioned | 2021-06-13T04:14:51Z | - |
dc.date.available | 2006-07-27 | |
dc.date.copyright | 2006-07-27 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-25 | |
dc.identifier.citation | 1. Z. L. Wang, J. Phys.: Condens. Matter, 16, R829 (2004)
2. M. Izaki, and T. Omi, J. Electrochem. Soc., 144,No.6, 1949 (1997) 3. G. P. Mohanty, and L. V. Azaroff, J. Chem. Phys., 35, 1268 (1961) 4. 溫慧怡, 高長寬比氧化鋅奈米柱之生成-氫氣後處理效應之研究, 國立成功大學化學工程學系碩士論文(2002) 5. 柯宏瑋, 電化學製備之氧化鋅薄膜特性分析, 長庚大學機械研究所碩士論文(2005) 6. Y. M. Mi, H. Odaka, S. Iwata, Jpn. J. Appl. Phys, 38, 3453 (1999) 7. 林素霞, 氧化鋅薄膜的特性改良及應用之研究, 國立成功大學材料科學及工程學系碩士論文(2003) 8. http://www.consultrsr.com/index.htm 9. M. Izaki, and T. Omi, Appl. Phys. Lett., 68, No.17, 2439 (1996) 10. S. Peulon, and D. Lincot, Adv. Mater. 8, No.2, 166 (1996) 11. T. Yamamoto, T. Shiosaki, and A. Kawabata, J. Appl. Phys. 51, 3113 (1980) 12. M. Izaki, and T. Omi, J. Electrochem. Soc., 143, No.3, L53 (1996) 13. H. Nanto, T. Minami, S. Shooji, and S. Takata, ibid., 55, 1029 (1984). 14. M. Izaki, J. Electrochem. Soc., 146 (12), 4517 (1999) 15. T. Yoshida, D. Komatsu, N. Shimokawa, and H. Minoura, Thin Solid Films, 451-452, 166 (2004) 16. S. Peulon, and D. Lincot, J. Electrochem. Soc., 145, No.3, 864 (1998) 17. B. Canava, D. Lincot, J. Appl. Electrochem., 30, 711 (2000) 18. T. Pauporte, D. Lincot, J. Electrochem. Soc., 148, No.4, C310 (2001) 19. T. Pauporte, D. Lincot, J. Electroanalytical Chemistry, 517, 54 (2001) 20. Z. Tian, J. Voigt, J. Liu, B. McKenzie, M. McDermott, M, Rodriguez, H. Konishi, and H. Xu, Nature Materials, 2, 821 (2003) 21. A. N. Gruzintsev, and E. E. Yakimov, Inorganic Materials, 41, No.7, 725 (2005) 22. M. Joseph, H. Tanaba, and H. Soeki, Physica B, 302/303, 140 (2001) 23. Q. X. Zhao, M. Willander, and R. E. Morjan, Appl. Phys. Lett., 83, No.1, 165 (2003) 24. 謝嘉民, 賴一凡, 林永昌, 枋志堯, 奈米通訊, 12, No.2, 28 (2005) 25. J. Weng, Y. Zhang, G. Han, Y. Zhang, L. Xu, J. Xu, X. Huang, and K. Chen, Thin Solid Films, 478, 25 (2005) 26. 國立交通大學奈米中心, 濕式清洗蝕刻台操作講義 27. A. M. Fox, Optical Properties of Solids, Oxford University Press (2001) 28. Q. Li, V. Kumar, Y. Li, H. Zhang, T. J. Marks, and P. H. Chang, Chem. Mater., 17, 1001 (2005) 29. S. Goto, N. Fujimura, T. Nishihara, and T. Ito, J. Cryst. Growth, 115, 816 (1991) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/32754 | - |
dc.description.abstract | 本研究於氯化鋅水溶液中,以電化學方式製備氧化鋅於透明導電玻璃上。首先,應用循環伏安法解析溶液與工作電位之關係,找出最適合沈積氧化鋅的條件,接著探討溶液組成及電鍍參數對鍍層材料性質和光學性質的影響。
研究結果顯示氧化鋅沈積的電位範圍約在-0.6至-1.0V(vs. Ag/AgCl)之間,過電位不足造成反應速率過慢,過電位過大則造成金屬鋅的沈積。定電位電鍍的過程中,電流值隨時間遞減,且趨於一飽和值,顯示氧化鋅半導體導電性不佳。於本研究中,藉由電化學所製備的氧化鋅為柱狀晶體,以c軸垂直基材成長,XRD結果顯示為多晶的氧化鋅鍍層具有(002)優選方位。晶體的緻密性影響氧化鋅鍍層粗糙度,粗糙度大造成散射嚴重,降低穿透率。工作電位、過氧化氫濃度及電鍍時間的增加皆有助於氧化鋅晶體的緻密性,但並無提升其光學性質。改採兩段式變電鍍製程不但能使晶體緻密,也降低了柱狀晶的尺寸,大幅提升了穿透率。由PL與PLE的結果發現一段式製程的發光位置、吸收邊際及能隙大小都有藍位移的情形,推測為內部存在大量間隙鋅原子所致,而兩段式製程則改善了這些問題,顯示兩段式電鍍製程可沈積較佳的氧化鋅鍍層。 | zh_TW |
dc.description.abstract | Zinc oxide (ZnO) was electrodeposited from zinc chloride electrolyte on ITO glass. The potentials at which ZnO can be plated from a specific electrolyte were determined using cyclic voltammetry. The effects of electrolyte composition and electroplating parameters on the materials and optical properties of ZnO films were then systematically studied.
Experimental results indicate that ZnO films can be plated at potentials ranging from -0.6 to -1.0V (vs. Ag/AgCl). The deposition rate was relatively small at low overpotentials, while metallic zinc was likely to form at high overpotentials. During potentiostatic deposition, the resultant current decreased with continued electroplating, and gradually reached a saturated value, signifying the semiconductor characteristic of ZnO. The ZnO electrodeposits consisted of columnar grains, which grew with c axis perpendicular to the substrate. Consequently, this polycrystalline ZnO film displayed a (002) texture as characterized by XRD. Dense ZnO crystals reduced the surface roughness of ZnO film, which, in turn, enhances the transmittance of the film due to less scattering effects. Although more dense ZnO films were plated by increasing overpotential, solution H2O2 concentration, and deposition time, these ZnO films exhibited insignificant improvement in optical properties. A two-step electroplating process was thus employed to prepare the ZnO film. This process enhanced the population density of columnar ZnO crystals, while reduced the size of the crystals. Both contributed to the enhanced transparency of ZnO films. The PL peak, absorption edge, and energy band gap of ZnO prepared by one-step process was found to have blue shift in PL and PLE spectrums, suggesting that the ZnO crystals contained significant amounts of interstitial zinc vacancies. The ZnO film fabricated by the two-step process showed less blue shift in PL and PLE spectrums. Apparently, the ZnO film with improved optical properties can be deposited using this two-step electroplating process. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T04:14:51Z (GMT). No. of bitstreams: 1 ntu-95-R93527059-1.pdf: 3028166 bytes, checksum: b187c8027ad388fef3c4e9d409c0850e (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 中文摘要 I
英文摘要 III 總目錄 V 圖目錄 VIII 表目錄 XI 第一章 序論 1 1-1前言 1 1-2研究動機 1 第二章 研究背景 3 2-1 ZnO介紹 3 2-1-1 結構特性 3 2-1-2 導電性質 4 2-1-3 光學特性 6 2-2氧化鋅製備方式 9 2-2-1化學氣相沈積 9 2-2-2濺鍍法 10 2-2-3脈衝雷射蒸鍍 10 2-2-4原子層磊晶 11 2-3電化學製程 12 2-3-1電化學簡介 12 2-3-2定電流與定電位模式 13 2-3-3電化學的優勢與劣勢 14 2-4氧化鋅的電化學製程 16 2-4-1電解液成份與操作參數 16 2-4-2 I-t 圖 22 2-4-3表面形貌 24 2-5氧化鋅的光電性質 25 第三章 氧化鋅成長製備方式 30 3-1實驗步驟流程 30 3-2電化學成長ZnO原理 31 3-3製程設備 32 3-4電化學沈積 33 3-4-1 ITO玻璃前處理 33 3-4-2電鍍液配置 34 3-4-3電化學系統架設 35 3-5試片分析 38 3-4-1分析試片製備 38 3-4-2試片分析 39 第四章 實驗結果 41 4-1循環伏安法分析 41 4-2晶粒數與過電位 46 4-3電鍍時間的影響 51 4-4過氧化氫濃度的影響 53 4-5兩階段式製程 59 4-6光學分析 64 第五章 討論 70 5-1 CV圖討論 70 5-2氧化鋅表面形貌 73 5-3過電位的影響 75 5-4電鍍時間與過氧化氫濃度的影響 76 5-5兩段式製程 80 第六章 結論 83 參考文獻 84 附錄A 循環伏安法 86 附錄B Ag/AgCl參考電極 88 | |
dc.language.iso | zh-TW | |
dc.title | 電化學製備氧化鋅及其結構與光學性質研究 | zh_TW |
dc.title | Microstructure and Optical Properties of Electrochemical Deposited Zinc Oxide | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 楊聰仁,黃清安,陳俊維 | |
dc.subject.keyword | 氧化鋅,電化學沈積,循環伏安,光學性質, | zh_TW |
dc.subject.keyword | zinc oxide,electrochemical deposition,cyclic voltammetry,optical property, | en |
dc.relation.page | 89 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-25 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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