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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林敏聰(Minn-Tsong Lin) | |
dc.contributor.author | Bin-Chan Lin | en |
dc.contributor.author | 林炳全 | zh_TW |
dc.date.accessioned | 2021-06-13T02:19:16Z | - |
dc.date.available | 2007-03-20 | |
dc.date.copyright | 2007-03-20 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-01-30 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30879 | - |
dc.description.abstract | 自旋穿遂磁電阻以鐵磁/絕緣/鐵磁所組成,在外加磁場下得到不同的
磁電阻,本文藉由改變自旋穿遂磁電阻的結構上以測量磁電阻的改 變,首先在自旋穿遂磁電阻上覆蓋一層鈮(50nm~100nm),觀察當鈮進 入超導態時對磁電阻的影響,我們可以觀察到當鈮進入超導態時,磁 電阻的反平型態纂會隨著溫度而下降,而平型態電阻則不受影響。 再而在而我們改變穿遂層,由本來的氧化鋁改變成氧化鎂,並觀察加 熱後自旋穿遂磁電阻的電阻改變。 | zh_TW |
dc.description.abstract | Magnetic tunnel junction is a promising candidate for applications in magnetic-storage technology, such as non-volatile memory, read head and magnetic sensors. Much higher tunnel magnetoresistance and lower resistance of junctions provide the feasibility for high-density magnetoresistive random-access-memory (MRAM) and less power consumption. We investgated the influence upon structure of magnetic tunnel junctions, including added capping layer and modification of spacer. We found that the TMR ratio drastically decreased with capping superconductive Nb. The thickness of capping Nb layer was varied onto TMR junctions to investgate the relation between superconductor and magnetism. Another TMR structure was examined on altering spacer. Huge TMR values have been theoretically predicted in (100) oriented single-crystalline Fe/MgO/Fe MTJs. We have fabricated MgO barrier layer which was sandwiched with amorphous CoFeB electrodes by magnetron supttering. We exhibit a well-defined parallel/antiparallel magnetic configuration by invoking Magneto-Optical Kerr Effect(MOKE), and adjust the thickness of MgO barrier to optimize TMR ratio. The annealing effect was also investigated to promote TMR value. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T02:19:16Z (GMT). No. of bitstreams: 1 ntu-96-R93222034-1.pdf: 10192022 bytes, checksum: 3613a7e30cf3eee6799cecd44bf1ad0f (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 1 Introduction 1
2 Basic Concept 5 2.1 Introduction of Magnetoresistance 5 2.1.1 Scattering magnetoresistance 7 2.1.2 Tunneling magnetoresistance 19 2.1.3 Mechanism of Huge Magnetoresistance 31 2.2 Superconductor 32 2.2.1 Properties of Superconductor 32 2.2.2 Superconducting Proximity Effect 33 2.2.3 e London Penetration Depth 34 3 Experimental Instruments 37 3.1 Fabrication apparatus 37 3.1.1 Ultra high vacuum system 37 3.1.2 Pumping system 39 3.1.3 Sputtering system 39 3.1.4 Contact masks 41 3.1.5 Sample preparation 41 3.2 Specimen Measurements 42 3.2.1 Four-Probe Resistance Measurements 44 3.2.2 Magneto-optical Kerr effect 45 4 TMR junction with superconductive Nb capping layer 47 4.1 Calibration of Nb thickness 47 4.2 NiFe/CoFe/Al2O3/CoFe/Nb(50nm~100nm) 48 5 TMR junction with MgO spacer 53 5.1 CoFeB as electrode with Al2O3 spacer 53 5.1.1 NiFe/CoFeB/AlO/CoFeB 53 5.1.2 Results 55 5.2 CoFeB and CoFe as electrodes with MgO spacer 57 5.2.1 NiFe/CoFe/MgO/CoFe 57 5.2.2 Results 57 5.3 CoFeB as electrode with MgO spacer 61 5.3.1 NiFe/CoFeB/MgO/CoFeB/CoFe 61 5.3.2 Results and Annealing Effect 65 6 Conclusion 69 Bibliography 70 | |
dc.language.iso | en | |
dc.title | 覆蓋超導層與氧化鎂位障對穿隧磁電阻之影響 | zh_TW |
dc.title | Effect of capping superconductive layer and MgO spacer on
tunnel magnetoresistance | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 江文中,陳銘堯 | |
dc.subject.keyword | 超導,鈮,氧化鎂,穿遂,磁阻, | zh_TW |
dc.subject.keyword | superconductor,MTJ,tunnel,junction,magnetoresistance, | en |
dc.relation.page | 76 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-01-31 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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