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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Yen-Huan Lin | en |
dc.contributor.author | 林延寰 | zh_TW |
dc.date.accessioned | 2021-06-08T06:04:40Z | - |
dc.date.copyright | 2007-07-26 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-23 | |
dc.identifier.citation | [1] Serge Luryi, Jimmy Xu, Alex Zaslavsky, Future trends in microelectronics – The Nano millennium, Wiley
[2] Robert L.Myers, Display interface – Fundamentals and standards, Wiley SID [3] Kazuhiro Jindai, Mineto Yagyu, U.S. Patent, US 6,755,709 B2 [4] F.J.Himpsel, J.A.Knapp, J.A.Van Vechten, and D.E.Eastman, “Quantum photoyield pf diamond (111) – A stable negative-affinity surface,” Phys Rev. B. vol.20, p.624, 1979. [5] J.Van der Weide and R.J.Nemanich, “Angle-Resolved Photoemission of Diamond (111) and (100) surface; Negative electron affinity and band measurements”, Vac. Sci. Technol. B, vol.12, no.4, p.2475, 1994. [6] Jindai et al., United States Patent, US 6,755,709 B2 [7] 日本專利 JP07-235255 [8] R.W.Wood, “A new form of cathode discharge and the production of x-rays, together with some notes on diffraction,” Phys. Rev. vol.5, no.1, p.1-5, 1897. [9] R.H. Fowler and L. W. Nordheim, “Electron emission in intense fields,”Proc. R. Soc. London, vol.A 119, p.173, 1928. [10] W.P.Dyke, J.K.Trolan, E.E.Martin, and J.P.Barbour, “the filed emission initiated vacuum arc. I. experiments on arc initiation,” Phys. Rev. vol.91, p.1043-1053, 1953. [11] W.W.Dolan, W.P.Dyke, and J.K.Trolan, “The filed initiated vacuum arc. II. The restively heated emitter,” Phys. Rev. vol.91, p.1054-1063, 1953. [12] K.R.Shoulder, “Microelectronics using electron-beam-activated machinging technologies,” Advances in computer, Edited by F.L.Alt, vol.2, Academic Press, New york, p.135-138, 1961. [13] C.A.Spindt, “A thin-film filed-emission cathode,” J. Appl. Phys., p-3504-3513, 1968. [14] R.Meyer, “Recent development on microtips display at LETI,” IVMC’91 Technical Digest, p.6, 1991. [15] N.E.McGruer and K.Warner, “Oxidation-sharpened gated field emitter array process,” IEEE Trans. Electron Devices, vol.38, no.10, p.488, 1991. [16] S.E.Huq and L.Chen, “Fabrication of sub-10nm silicon tips: a new approach,” J. Vac. Sci. & Technol. B, vol.13(6), p.2718, 1995. [17] Veljko Milanovi, Lance Doherty, Dana A.Teasdale, Chen Zhang, Siavash Parsa, Kristofer S. J. pister, “Application of Micromachining Technology to Lateral Field Emission Devices”. [18] C.A.Spindt, I.Brodie, L.Humphrey, and E.R.Westerberg, “Physical properties of thin-film filed emission cathodes with molybdenum cones,” J. Appl. Phys., vol.47, p.5248-5263, 1976. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25187 | - |
dc.description.abstract | 本篇研究的中心即在於製作一橫向場發射結構。經由使用電子束微影曝光系統(Electron Beam Litography System)、反應氣體離子乾式蝕刻系統(Reactive Ion Etching)以及真空熱蒸鍍系統,我以四種不同設計圖形完成了一系列具有立體缺口的結構,並從中選擇適合作為場發射結構的結果進行量測。而量測出來的電流-電壓特性經過Fowler-Norheim理論的驗證,證實我所製作的結構具備有場發射的電流特性。而同時我們發現製作完成的結構具有低起始電壓的特性,量測所得的起始電壓幾乎都在1伏特左右。而這項特性對於未來製作元件甚至電路方面,都會有很重要的幫助。 | zh_TW |
dc.description.abstract | In this thesis, we use e-beam lithography system and reactive ion etching to fabricate a simple lateral field emission structure. Our design needs only one lithography process to define the cathode, anode and trench region. Then we use reactive ion etching to etch the trench region on the substrate. After this process, the cathode and anode region is separated by trench etching process. Then we use PVD to deposit a thin aluminum film to form the final structure.
We have done some measurements to verify the characteristics of our structure. With a set of low leakage current probe station system, we can easily detect the changing of emission current in orders. When using Folwer-Nordheim equation to make a plot, we can have a plot with partial linear region. Which means the current in this region is generated by field emission. Also, we discover our structure has low turn-on voltage down to 1V. With different cathode-anode distance, the emission characteristic and turn-on voltage are different for sure. Nonetheless, the turn-on voltages of our structures are below 2V, unless it has breakdown before. This low turn-on voltage characteristic is very useful for further application. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T06:04:40Z (GMT). No. of bitstreams: 1 ntu-96-J94921040-1.pdf: 3960399 bytes, checksum: 0c534d11671d45b69b76b4d8c3e3f099 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 口試委員會審定書 ………………………………………………… i
誌謝 ………………………………………………………………… ii 中文摘要 …………………………………………………………… iii 英文摘要 …………………………………………………………… iv 第一章 簡介………………………………………………………… 1 1.1 研究動機………………………………………………………… 1 1.2 場發射元件的簡介……………………………………………… 4 1.3 論文架構………………………………………………………… 8 1.4 參考文獻………………………………………………………… 9 第二章 背景知識…………………………………………………… 10 2.1 場發射歷史……………………………………………………… 10 2.2 場發射理論……………………………………………………… 11 2.3 參考文獻………………………………………………………… 13 第三章 實驗製程和量測儀器……………………………………… 16 3.1 實驗製程與儀器………………………………………………… 16 3.1.1 簡介…………………………………………………………… 16 3.1.2 製程流程……………………………………………………… 16 3.1.3 電子束微影系統……………………………………………… 20 3.1.4 反應氣體離子乾式蝕刻……………………………………… 22 3.1.5 真空熱蒸鍍系統……………………………………………… 25 3.2 量測與儀器……………………………………………………… 27 第四章 實驗結果和討論…………………………………………… 28 4.1 簡介……………………………………………………………… 28 4.2 製程結果與討論………………………………………………… 28 4.3 量測結果與討論………………………………………………… 38 4.4 結論……………………………………………………………… 47 第五章 結論………………………………………………………… 48 | |
dc.language.iso | zh-TW | |
dc.title | 橫向場發射結構之製作 | zh_TW |
dc.title | Fabrication of lateral field emission structure | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 謝正雄,孫允武,林致廷,陳邦旭 | |
dc.subject.keyword | 場發射,橫向結構, | zh_TW |
dc.subject.keyword | field emission,lateral atructure, | en |
dc.relation.page | 48 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2007-07-25 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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