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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
dc.contributor.author | Yu-Tien Wu | en |
dc.contributor.author | 吳雨恬 | zh_TW |
dc.date.accessioned | 2021-06-08T00:45:15Z | - |
dc.date.copyright | 2020-08-20 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-08-14 | |
dc.identifier.citation | 1. Ashton, K., That ‘internet of things’ thing. RFID journal, 2009. 22(7): p. 97-114. 2. Philip Chen, C.L. and C.-Y. Zhang, Data-intensive applications, challenges, techniques and technologies: A survey on Big Data. Information Sciences, 2014. 275: p. 314-347. 3. Hu, P., et al., Fog Computing Based Face Identification and Resolution Scheme in Internet of Things. IEEE Transactions on Industrial Informatics, 2017. 13(4): p. 1910-1920. 4. Gao, S., et al., Organic and hybrid resistive switching materials and devices. Chem Soc Rev, 2019. 48(6): p. 1531-1565. 5. Kotecki, D.E., A review of high dielectric materials for DRAM capacitors. Integrated Ferroelectrics, 2006. 16(1-4): p. 1-19. 6. Singh, J., S.P. Mohanty, and D.K. Pradhan, Introduction to SRAM, in Robust SRAM Designs and Analysis. 2013, Springer. p. 1-29. 7. Meena, J.S., et al., Overview of emerging nonvolatile memory technologies. Nanoscale research letters, 2014. 9(1): p. 526. 8. De Graaf, C., et al. A novel high-density low-cost diode programmable read only memory. in International Electron Devices Meeting. Technical Digest. 1996. IEEE. 9. Bez, R., et al., Introduction to flash memory. Proceedings of the IEEE, 2003. 91(4): p. 489-502. 10. Tal, A., Two flash technologies compared: NOR vs NAND. White Paper of M-SYstems, 2002. 11. Atwood, G., S.-I. Chae, and S.S. Shim, Next-Generation Memory [Guest editors' introduction]. Computer, 2013. 46(8): p. 21-22. 12. Kim, S.K., et al., Titanium dioxide thin films for next-generation memory devices. Journal of Materials Research, 2012. 28(3): p. 313-325. 13. Li, Y. and K.N. Quader, NAND flash memory: Challenges and opportunities. Computer, 2013. 46(8): p. 23-29. 14. Chen, A., A review of emerging non-volatile memory (NVM) technologies and applications. Solid-State Electronics, 2016. 125: p. 25-38. 15. Ishiwara, H., Ferroelectric random access memories. J Nanosci Nanotechnol, 2012. 12(10): p. 7619-27. 16. Tehrani, S. Status and outlook of MRAM memory technology. in 2006 International Electron Devices Meeting. 2006. IEEE. 17. Sbiaa, R. and S.N. Piramanayagam, Recent Developments in Spin Transfer Torque MRAM. physica status solidi (RRL) - Rapid Research Letters, 2017. 11(12). 18. Raoux, S., Phase Change Materials. Annual Review of Materials Research, 2009. 39(1): p. 25-48. 19. Lacaze, P.C. and J.C. Lacroix, Non‐Volatile Phase‐Change Electronic Memories (PCRAM). Non‐Volatile Memories, 2014: p. 123-163. 20. Pan, F., et al., Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Materials Science and Engineering: R: Reports, 2014. 83: p. 1-59. 21. Ho, C., et al. 9nm half-pitch functional resistive memory cell with< 1µa programming current using thermally oxidized sub-stoichiometric wo x film. in 2010 International Electron Devices Meeting. 2010. IEEE. 22. Torrezan, A.C., et al., Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology, 2011. 22(48): p. 485203. 23. Choi, B.J., et al., Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Lett, 2013. 13(7): p. 3213-7. 24. Cheng, C.-H., et al. High performance ultra-low energy RRAM with good retention and endurance. in 2010 International Electron Devices Meeting. 2010. IEEE. 25. Govoreanu, B., et al. 10× 10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation. in 2011 International Electron Devices Meeting. 2011. IEEE. 26. Lee, M.J., et al., A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. Nat Mater, 2011. 10(8): p. 625-30. 27. Lim, E. and R. Ismail, Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey. Electronics, 2015. 4(3): p. 586-613. 28. Han, J.S., et al., Air-Stable Cesium Lead Iodide Perovskite for Ultra-Low Operating Voltage Resistive Switching. Advanced Functional Materials, 2018. 28(5). 29. Ielmini, D., R. Bruchhaus, and R. Waser, Thermochemical resistive switching: materials, mechanisms, and scaling projections. Phase Transitions, 2011. 84(7): p. 570-602. 30. Chen, J.Y., et al., Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament. Adv Mater, 2015. 27(34): p. 5028-33. 31. Kuo, C.C., et al., Galvanic Effect of Au–Ag Electrodes for Conductive Bridging Resistive Switching Memory. IEEE Electron Device Letters, 2015. 36(12): p. 1321-1324. 32. Zhu, X., J. Lee, and W.D. Lu, Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects. Adv Mater, 2017. 29(29). 33. Goux, L., et al., Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells. Applied Physics Letters, 2010. 97(24). 34. Wang, X.-F., et al., Graphene resistive random memory — the promising memory device in next generation. Chinese Physics B, 2017. 26(3). 35. Wong, H.S.P., et al., Metal–Oxide RRAM. Proceedings of the IEEE, 2012. 100(6): p. 1951-1970. 36. Li, B., et al., Metal halide perovskites for resistive switching memory devices and artificial synapses. Journal of Materials Chemistry C, 2019. 7(25): p. 7476-7493. 37. Tian, H., et al., Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing. ACS Nano, 2017. 11(12): p. 12247-12256. 38. Ge, R., et al., Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides. Nano Lett, 2018. 18(1): p. 434-441. 39. Bertolazzi, S., et al., Nonvolatile Memories Based on Graphene and Related 2D Materials. Adv Mater, 2019. 31(10): p. e1806663. 40. Chiu, F.-C., A Review on Conduction Mechanisms in Dielectric Films. Advances in Materials Science and Engineering, 2014. 2014: p. 1-18. 41. Rose, A., Space-Charge-Limited Currents in Solids. Physical Review, 1955. 97(6): p. 1538-1544. 42. Ranjan, A., et al., Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films. Sci Rep, 2018. 8(1): p. 2854. 43. Soylu, M. and B. Abay, Analysing space charge-limited conduction in Au/n-InP Schottky diodes. Physica E: Low-dimensional Systems and Nanostructures, 2010. 43(1): p. 534-538. 44. Mark, P. and W. Helfrich, Space‐charge‐limited currents in organic crystals. Journal of Applied Physics, 1962. 33(1): p. 205-215. 45. Kang, K., et al., High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure. Adv Mater, 2019. 31(21): p. e1804841. 46. Choi, J., et al., Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius. ACS Appl Mater Interfaces, 2017. 9(36): p. 30764-30771. 47. Seo, J.Y., et al., Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite. Nanoscale, 2017. 9(40): p. 15278-15285. 48. Hwang, B. and J.S. Lee, Lead-free, air-stable hybrid organic-inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage. Nanoscale, 2018. 10(18): p. 8578-8584. 49. Hamdeh, U.H., et al., Solution-Processed BiI3 Thin Films for Photovoltaic Applications: Improved Carrier Collection via Solvent Annealing. Chemistry of Materials, 2016. 28(18): p. 6567-6574. 50. Coutinho, N.F., et al., Thermal Evaporated Bismuth Triiodide (BiI3) Thin Films for Photovoltaic Applications. MRS Advances, 2018. 3(55): p. 3233-3236. 51. D. Prasad, M., et al., Single and twinned plates of 2D layered BiI3 for use as nanoscale pressure sensors. CrystEngComm, 2018. 20(33): p. 4857-4866. 52. Nason, D. and L. Keller, The growth and crystallography of bismuth tri-iodide crystals grown by vapor transport. Journal of crystal growth, 1995. 156(3): p. 221-226. 53. Wang, C., et al., Preparation and vibrational properties of BiI3 nanocrystals. Chemistry Letters, 2001. 30(2): p. 154-155. 54. Zhou, W., et al., Fundamentals of scanning electron microscopy (SEM), in Scanning microscopy for nanotechnology. 2006, Springer. p. 1-40. 55. Inkson, B., Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for materials characterization, in Materials characterization using nondestructive evaluation (NDE) methods. 2016, Elsevier. p. 17-43. 56. Ermrich, M. and D. Opper, XRD for the analyst. Getting acquainted with the principles. Second. Panalytical, 2013. 57. Patterson, A., The Scherrer formula for X-ray particle size determination. Physical review, 1939. 56(10): p. 978. 58. Schlüter, M., et al., Electronic structure of BiI3. physica status solidi (b), 1976. 78(2): p. 737-747. 59. Chen, H., et al., Multistep nucleation and growth mechanisms of organic crystals from amorphous solid states. Nat Commun, 2019. 10(1): p. 3872. 60. Majumder, S., et al., Growth Kinetics of Stacks of Lamellar Polymer Crystals. Macromolecules, 2018. 51(21): p. 8738-8745. 61. Puckrin, E. and A.J. Slavin, Adsorption of bismuth onto the Au(111) surface. Phys Rev B Condens Matter, 1990. 41(8): p. 4970-4975. 62. deQuilettes, D.W., et al., Photo-induced halide redistribution in organic-inorganic perovskite films. Nat Commun, 2016. 7: p. 11683. 63. Zhang, H., A.H.H. Ramadan, and R.A. De Souza, Atomistic simulations of ion migration in sodium bismuth titanate (NBT) materials: towards superior oxide-ion conductors. Journal of Materials Chemistry A, 2018. 6(19): p. 9116-9123. 64. Eames, C., et al., Ionic transport in hybrid lead iodide perovskite solar cells. Nat Commun, 2015. 6: p. 7497. 65. Li, C., et al., Iodine Migration and its Effect on Hysteresis in Perovskite Solar Cells. Advanced Materials, 2016. 28(12): p. 2446-2454. 66. Li, C.S., et al., Van der Waals Epitaxy of Horizontally Orientated Bismuth Iodide/Silicon Heterostructure for Nonvolatile Resistive‐Switching Memory with Multistate Data Storage. Advanced Materials Interfaces, 2020. 67. Zhu, Y., et al., Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device. Advanced Electronic Materials, 2019. 6(2). 68. Zhuang, P., et al., Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories. Advanced Electronic Materials, 2019. 6(1). 69. Khorrami, G.H., et al., Optical and structural properties of X-doped (X=Mn, Mg, and Zn) PZT nanoparticles by Kramers–Kronig and size strain plot methods. Ceramics International, 2012. 38(7): p. 5683-5690. 70. Kato, Y., et al., Silver Iodide Formation in Methyl Ammonium Lead Iodide Perovskite Solar Cells with Silver Top Electrodes. Advanced Materials Interfaces, 2015. 2(13). 71. Cuhadar, C., et al., All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory. ACS Appl Mater Interfaces, 2018. 10(35): p. 29741-29749. 72. Murugesan, P., S. Narayanan, and M. Matheswaran, Visible light photocatalytic conversion of CO2 in aqueous solution using 2D-structured carbon-based catalyst-coated β,γ-AgI nanocomposite. Journal of Materials Science, 2019. 54(10): p. 7798-7810. 73. Schroeder, H., et al., Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells. Journal of Applied Physics, 2010. 107(5). 74. Huang, P., et al., Analysis of the Voltage–Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching. IEEE Transactions on Nanotechnology, 2014. 13(6): p. 1127-1132. 75. Choi, J., et al., Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching. Adv Mater, 2016. 28(31): p. 6562-7. 76. Han, J.S., et al., Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories. ACS Appl Mater Interfaces, 2019. 11(8): p. 8155-8163. 77. Yang, K., et al., A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory. Applied Physics Letters, 2017. 110(8). 78. Choi, J., et al., Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses. Adv Mater, 2018. 30(42): p. e1704002. 79. Xu, W., et al., Organometal Halide Perovskite Artificial Synapses. Adv Mater, 2016. 28(28): p. 5916-22. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17877 | - |
dc.description.abstract | 本研究中,利用碘化鉍分別成長在活性金屬電極與惰性金屬電極上,探討其結晶性、型態與化學反應,進而研究其製成電阻式記憶體後的電阻切換效應。我們發現當碘化鉍成長於金電極上時,利用XPS和UPS皆可觀察到元件內部形成自建的金屬燈絲,故元件初始為低阻態,需透過Negative forming process方可切換至高阻態。但由於元件中缺少離子儲存層,故元件穩定性不佳。而當碘化鉍成長於銀電極上時,可明顯看到其結晶形態與在金電極上時不同,亦可由XPS觀察到銀與碘離子會反應使金屬鉍被還原出來,又藉由降低銀在元件中的含量,可降低Negative forming所需之電流與電壓。此種碘化鉍製成的電阻式記憶體元件,展現了良好的特性,可達9個級距的on/off ratio、10000秒以上的記憶儲存時間、1200次以上的開關,與≤500ns的高速操作在±1V內,藉由set process時的限流亦可控制元件的阻值,使該元件具有6個記憶儲存階段。這些特性顯示了碘化鉍是具有發展潛力的電阻切換材料,而本研究亦提供電阻式記憶體材料選擇的新觀點,有助於未來元件設計與電阻式記憶體結合光電元件的應用。 | zh_TW |
dc.description.abstract | In this thesis, the layered material BiI3, which is one of the precursors of the lead-free perovskite, was proven to have good potential for use as a resistive switching layer in RRAMs, and demonstrated promising performance because of its anisotropic carrier transport, high absorption coefficient, and structural stability. The influence of the underlying metal substrate on the chemical and physical properties of the BiI3 top layer, and the device performance of the corresponding RRAM, were systematically studied. The surface roughness and morphology of the samples were studied by atomic force microscopy and scanning electron microscopy, respectively. The crystallinity and crystal phase of BiI3 were studied using X-ray diffraction. The chemical state and electronic structure of the BiI3/metal heterostructure were studied using X-ray and ultraviolet photoemission spectroscopy. The mechanism of resistive switching behavior was studied by analyzing the I–V characteristics and cross-sectional image of the device using tunneling electron microscopy. The physical properties and chemical states of the BiI3 layer were found to be strongly dependent on the underlying metal substrates. The upward diffusion of Ag, and the self-formation of a conductive filament consisting of metallic Bi, were observed, and were found to affect the resistive switching behavior. In addition, the Ag plays a critical role in device stabilization and on the quantity of the conductive filament, which initially required a negative forming process. By coating the Au bottom electrode with Ag, the forming voltage of the device was significantly reduced, and the device was much more stable than the Au/BiI3/Au device. The RRAM device with a structure of Au/10 nm Ag/BiI3/Au demonstrated an ultrahigh on/off ratio of 109, good retention of at least 104 s, 1200 switching cycles, at least 6 different storage state, and a short switch speed of ≤ 500 ns at a low operating pulse of ±1 V. In summary, the BiI3 RRAM exhibits a high on/off ratio, good stability, multi-state data storage, and fast operation, and is hence an exciting new prospect for the development of RRAMs. In addition, this research on the effect of the underlying bottom electrode will assist the device design and material selection of the BiI3 RRAM and its optoelectronic devices. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T00:45:15Z (GMT). No. of bitstreams: 1 U0001-1308202023040800.pdf: 5216094 bytes, checksum: c1c8df5bc02038ef22e81d219e619470 (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 誌謝 I 中文摘要 II Abstract III 目錄 V 圖目錄 VIII 表目錄 XII Chapter 1 緒論 1 1.1前言 1 1.2 記憶體簡介 1 • 揮發性記憶體(Volatile memory) 1 • 非揮發性記憶體(Non-volatile memory) 3 1.3 次世代記憶體 6 • 鐵電隨機存取記憶體Ferroelectric random access memory(FeRAM) 6 • 磁阻式記憶體Magnetoresistive Random Access Memory (MRAM) 6 • 相變隨機存取記憶體Phase Change Random Access Memory (PCRAM) 7 • 電阻式隨機存取記憶體Resistive Random Access Memory(RRAM) 7 1.4 電阻式記憶體材料與工作原理 8 • I-V特性曲線 8 • 電阻切換機制 9 • 元件參數介紹 11 • 電極材料 12 • 絕緣層材料 12 1.5 傳導機制 13 • Ohmic conduction 13 • Space-Charge-Limited Conduction (SCLC) 14 1.6 實驗動機 16 Chapter 2 實驗原理與方法 17 2.1 製程儀器 17 • 氮氣手套箱 17 • 真空熱蒸鍍機 17 2.2 量測分析 18 • 電性量測 18 • 掃描式電子顯微鏡 19 • 穿隧式電子顯微鏡 19 • 聚焦離子束 20 • X光繞射儀 21 • 原子力顯微鏡 21 • X射線光電子光譜儀 22 • 紫外光電子能譜儀 22 2.3 實驗材料 23 • 碘化鉍 (Bismuth iodide) 23 2.4 實驗流程 24 • 基板清洗 24 • 碘化鉍與金屬電極蒸鍍 24 Chapter 3 碘化鉍沉積於金電極 25 3.1實驗動機 25 3.2 表面分析 25 3.3 光譜特性分析 27 3.4 電性分析 30 • I-V特性曲線 30 • 電性與碘化鉍厚度之關聯性 32 • Non-ploar特性 34 • 穩定性測試 35 3.5 元件老化現象 37 Chapter 4 碘化鉍沉積在銀電極上 41 4.1 實驗動機 41 4.2 表面分析 42 4.3 光譜特性分析 44 4.4 電性分析 47 • I-V特性曲線 47 • 不同面積 48 • 不同溫度 50 • 穩定性測試 51 • 多階段記憶儲存特性 53 Chapter 5 金-銀混合結構元件 54 5.1 實驗動機 54 5.2 表面分析 54 5.3 光譜特性分析 56 5.4 TEM、EDX分析 57 5.5 電性分析 59 • I-V特性曲線 59 • 不同結構元件之比較 60 • 穩定性測試 63 • 操作速度 65 • 多階段記憶儲存特性 67 Chapter 6 總結與未來展望 69 6.1 總結 69 6.2 未來展望 73 參考文獻 74 | |
dc.language.iso | zh-TW | |
dc.title | 金屬電極對電阻式記憶體阻值切換機制以及碘化鉍結晶性之影響 | zh_TW |
dc.title | Correlation of Bottom Metal Electrodes with the Properties and Resistive Switching Behaviors of BiI3 | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林恭如(Gong-Ru Lin),吳忠幟(Chung-Chih Wu),陳奕君(I-Chun Cheng),陳美杏(Mei-Hsin Chen) | |
dc.subject.keyword | 電阻式記憶體,碘化鉍,多階段儲存,下電極, | zh_TW |
dc.subject.keyword | resistive-random access memory,bismuth iodide,multi-state storage,bottom electrode, | en |
dc.relation.page | 78 | |
dc.identifier.doi | 10.6342/NTU202003344 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2020-08-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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